EEWORLDEEWORLDEEWORLD

Part Number

Search

PHB130N03LT/T3

Description
75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size42KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

PHB130N03LT/T3 Overview

75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET

PHB130N03LT/T3 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
FEATURES
’Trench’
technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHP130N03LT, PHB130N03LT
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 30 V
I
D
= 75 A
g
s
R
DS(ON)
6 mΩ (V
GS
= 5 V)
R
DS(ON)
5 mΩ (V
GS
= 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHP130N03LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB130N03LT is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
gate
drain
1
source
drain
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 175˚C
T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C; V
GS
= 5 V
T
mb
= 100 ˚C; V
GS
= 5 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
±
13
75
75
240
187
175
UNIT
V
V
V
A
A
A
W
˚C
1
It is not possible to make connection to pin 2 of the SOT404 package.
January 1998
1
Rev 1.300

PHB130N03LT/T3 Related Products

PHB130N03LT/T3 PHB130N03LT PHB130N03LT-T PHB130N03LTT/R PHP130N03LT
Description 75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET 75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN 75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET 75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
Maker NXP NXP NXP NXP NXP
Reach Compliance Code unknown unknown unknown compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE, FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V 30 V
Maximum drain current (ID) 75 A 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.006 Ω 0.006 Ω 0.006 Ω 0.006 Ω 0.006 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 240 A 240 A 240 A 240 A 240 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES NO
Terminal form GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 - PLASTIC, TO-220AB, 3 PIN
Maximum drain current (Abs) (ID) - 75 A - 75 A 75 A
Maximum operating temperature - 175 °C - 175 °C 175 °C
Maximum power dissipation(Abs) - 187 W - 187 W 187 W
The amplitude difference between the oscilloscope and the multimeter when measuring AC signals is large
I used a signal generator, connected a resistor, the frequency was 50hz, and the voltage across the resistor was about 10V when measured with an oscilloscope, but only 3.7V when measured with a multim...
secondlife110 Analog electronics
2440 Learning (VII) Linux File Operations
[i=s]This post was last edited by lonerzf on 2014-7-27 11:36[/i] I worked part-time two days ago and didn't learn much. Today I started learning how to write Linux applications. Reference articles for...
lonerzf Linux and Android
Hand-controlled computer screen ~ made by myself
[flash]http://player.youku.com/player.php/sid/XMzU2MjI0ODgw/v.swf[/flash]...
ginny DIY/Open Source Hardware
EnergyTrace technology - a must-have method for using low-power devices
[i=s]This post was last edited by Pinghu Qiuyue on 2015-6-28 20:21[/i] Two low power analysis modes, the analysis methods that should be mastered when learning MSP432, shared with everyone. 1. [color=...
平湖秋月 Microcontroller MCU
EEWORLD University ---- Wireless RF Application of MSP430
Wireless RF Applications of MSP430 : https://training.eeworld.com.cn/course/340...
dongcuipin MCU
Three considerations for selecting Ethernet for harsh industrial environments
Since its introduction, Ethernet has grown by leaps and bounds and is now widely used in the commercial and enterprise markets. With its well-defined standards and ease of deployment, it is only natur...
alan000345 TI Technology Forum

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2799  712  2430  1446  1063  57  15  49  30  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号