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CAT28F512HRA-90T

Description
64K X 8 FLASH 12V PROM, 90 ns, PQCC32
Categorystorage    storage   
File Size91KB,16 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

CAT28F512HRA-90T Overview

64K X 8 FLASH 12V PROM, 90 ns, PQCC32

CAT28F512HRA-90T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTSOP
package instruction8 X 20 MM, HALOGEN FREE AND ROHS COMPLIANT, REVERSE, TSOP-32
Contacts32
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time90 ns
command user interfaceYES
Data pollingNO
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G32
JESD-609 codee3
length20 mm
memory density524288 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals32
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize64KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12 V
Certification statusNot Qualified
reverse pinoutYES
Maximum seat height1.2 mm
Maximum standby current0.00001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width8 mm
CAT28F512
512K-Bit CMOS Flash Memory
FEATURES
s
Fast Read Access Time: 90/120/150 ns
s
Low Power CMOS Dissipation:
Licensed Intel
second source
s
Commercial, Industrial and Automotive
Temperature Ranges
s
Stop Timer for Program/Erase
s
On-Chip Address and Data Latches
s
JEDEC Standard Pinouts:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
µ
A max (CMOS levels)
s
High Speed Programming:
–10
µ
s per byte
–1 Sec Typ Chip Program
s
12.0V
±
5% Programming and Erase Voltage
–32-pin DIP
–32-pin PLCC
–32-pin TSOP ( 8 x 20)
s
100,000 Program/Erase Cycles
s
10 Year Data Retention
s
"Green" Package Options Available
s
Electronic Signature
DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices. Programming and Erase
are performed through an operation and verify algo-
rithm. The instructions are input via the I/O bus, using a
two write cycle scheme. Address and Data are latched
to free the I/O bus and address bus during the write
operation.
The CAT28F512 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
BLOCK DIAGRAM
I/O0–I/O7
I/O BUFFERS
ERASE VOLTAGE
SWITCH
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
CE
OE
ADDRESS LATCH
Y-GATING
Y-DECODER
524,288 BIT
MEMORY
ARRAY
A0–A15
X-DECODER
VOLTAGE VERIFY
SWITCH
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
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