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CP317-2N5179-CG

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size178KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CP317-2N5179-CG Overview

Transistor

CP317-2N5179-CG Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Base Number Matches1
PROCESS
Small Signal Transistor
NPN - RF Transistor Chip
CP317
Central
TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
53,730
PRINCIPAL DEVICE TYPES
CMPT918
2N918
2N2857
2N5179
2N5770
BFY90
PN3563
PN3564
BACKSIDE COLLECTOR
EPITAXIAL PLANAR
14.5 x 14.5 MILS
9.0 MILS
2.4 x 2.2 MILS
2.4 x 2.2 MILS
Al - 30,000Å
Au - 18,000Å
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
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