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FGA15N120ANTD 1200V NPT Trench IGBT
May 2006
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V
CE(sat), typ
= 1.9V
@ I
C
= 15A and T
C
= 25°C
• Low switching loss: E
off, typ
= 0.6mJ
@ I
C
= 15A and T
C
= 25°C
• Extremely enhanced avalanche capability
tm
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
C
G
G C E
TO-3P
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
D
T
J
T
stg
T
L
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
(Note 1)
Description
Collector-Emitter Voltage
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
FGA15N120ANTD
1200
±
20
30
15
45
15
45
186
74
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.67
2.88
40
Units
°C/W
°C/W
°C/W
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA15N120ANTD Rev. A1
FGA15N120ANTD 1200V NPT Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA15N120ANTD
Device
FGA15N120ANTD
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
I
CES
I
GES
Collector Cut-Off Current
G-E Leakage Current
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
3
± 250
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 15mA, V
CE
= V
GE
I
C
= 15A
,
V
GE
= 15V
I
C
= 15A
,
V
GE
= 15V,
T
C
= 125°C
I
C
= 30A
,
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
2650
143
96
--
--
--
pF
pF
pF
V
GE
= 15V
4.5
--
--
--
6.5
1.9
2.2
2.3
8.5
2.4
--
--
V
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 600 V, I
C
= 15A,
V
GE
= 15V
V
CC
= 600 V, I
C
= 15A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CC
= 600 V, I
C
= 15A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
20
160
100
3
0.6
3.6
15
20
170
150
3.2
0.8
4.0
120
16
50
--
--
--
180
4.5
0.9
5.4
--
--
--
--
4.8
1.2
6.0
180
22
65
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
FGA15N120ANTD Rev. A1
2
www.fairchildsemi.com
FGA15N120ANTD 1200V NPT Trench IGBT
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Cur-
rent
Diode Reverse Recovery Charge
I
F
= 15A
Test Conditions
T
C
= 25°C
T
C
= 125°C
I
F
= 15A
dI/dt = 200 A/μs
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.7
1.8
210
280
27
31
2835
4340
Max.
2.7
--
330
--
40
--
6600
--
Units
V
ns
A
nC
FGA15N120ANTD Rev. A1
3
www.fairchildsemi.com
FGA15N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
T
C
= 25 C
o
Figure 2. Typical Saturation Voltage
Characteristics
150
Common Emitter
V
GE
= 15V
o
20V
17V
15V
Collector Current, I
C
[A]
12V
Collector Current , I
C
[A]
150
120
T
C
= 25 C
T
C
= 125 C
o
100
V
GE
= 10V
90
60
50
30
0
0
2
4
6
8
10
0
0
2
4
6
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
V
GE
= 15V
I
C
= 24A
2.5
Figure 4. Saturation Voltage vs. V
GE
Common Emitter
o
T
C
= 25 C
16
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
12
I
C
= 15A
8
2.0
4
24A
I
C
= 7.5A
0
4
8
15A
1.5
25
50
75
100
o
0
125
150
12
16
20
Case Temperature, T
C
[ C]
Gate-Emitter Voltage, V
GE
[V]
Figure 5. Saturation Voltage vs. V
GE
16
Common Emitter
o
T
C
= 125 C
Figure 6. Capacitance Characteristics
3500
3000
2500
Ciss
Collector-Emitter Voltage, V
CE
[V]
Capacitance [pF]
12
2000
1500
1000
500
0
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25 C
o
8
4
24A
15A
Crss
0
0
4
I
C
= 7.5A
8
12
16
20
0.1
1
10
Gate-Emitter Voltage, V
GE
[V]
Collector-Emitter Voltage, V
CE
[V]
FGA15N120ANTD Rev. A1
4
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