D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
FGL60N100BNTD
IGBT
FGL60N100BNTD
NPT-Trench IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Features
•
•
•
•
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.5 V @ I
C
= 60A
High Input Impedance
Built-in Fast Recovery Diode
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
C
G
TO-264
G
C
E
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
FGL60N100BNTD
1000
±
25
60
42
200
15
180
72
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.69
2.08
25
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev.A1
www.fairchildsemi.com
FGL60N100BNTD
Electrical Characteristics of IGBT
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 1mA
V
CE
= 1000V, V
GE
= 0V
V
GE
= ± 25, V
CE
= 0V
1000
--
--
--
--
--
--
1.0
± 500
V
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 60mA, V
CE
= V
GE
I
C
= 10A
,
V
GE
= 15V
I
C
= 60A
,
V
GE
= 15V
4.0
--
--
5.0
1.5
2.5
7.0
1.8
2.9
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
=10V
,
V
GE
= 0V,
f = 1MHz
--
--
--
6000
260
200
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600 V, I
C
= 60A,
R
G
= 51Ω, V
GE
=15V,
Resistive Load, T
C
= 25°C
V
CE
= 600 V, I
C
= 60A,
V
GE
= 15V
,
T
C
= 25°C
--
--
--
--
--
--
--
140
320
630
130
275
45
95
--
--
--
250
350
--
--
ns
ns
ns
ns
nC
nC
nC
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
R
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Instantaneous Reverse Current
C
= 25°C unless otherwise noted
Test Conditions
I
F
= 15A
I
F
= 60A
I
F
= 60A di/dt = 20 A/us
V
RRM
= 1000V
Min.
--
--
--
--
Typ.
1.2
1.8
1.2
0.05
Max.
1.7
2.1
1.5
2
Units
V
V
μs
μA
FGL60N100BNTD Rev.A1
www.fairchildsemi.com
FGL60N100BNTD
200
Common Emitter
o
T
C
= 25 C
20V
15V
90
Collector Current, I
C
[A]
10V
9V
80
70
60
50
40
30
20
10
0
0
Common Emitter
V
GE
= 15V
T
C
= 25 C
T
C
= 125 C ------
o
o
Collector Current, I
C
[A]
150
T
C
= 25 C
T
C
= 125 C
o
o
100
8V
50
7V
V
GE
= 6V
0
0
Collector-Emitter Voltage, V
CE
[V]
1
2
3
4
1
2
3
4
Collector-Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
10
Collector-Emitter Voltage, V
CE
[V]
Common Emitter
V
GE
=15V
3
80A
60A
Common Emitter
O
T
C
= - 40 C
Collector-Emitter Voltage, V
CE
[V]
8
6
2
30A
4
30A
60A
80A
I
C
=10A
1
-50
0
50
100
150
2
I
C
=10A
0
4
8
12
16
20
Case Temperature, T
C
[∩ ]
Gate-Emitter Voltage, V
GE
[V]
Fig 3. Saturation Voltage vs. Case
Temperature at Varient Current Level
Fig 4. Saturation Voltage vs. V
GE
10
Common Emitter
o
T
C
= 25 C
10
Common Emitter
o
T
C
= 125 C
Collector-Emitter Voltage, V
CE
[V]
8
Collector-Emitter Voltage, V
CE
[V]
8
6
30A
4
60A
80A
2
I
C
= 10A
0
4
8
12
16
20
6
30A
60A
80A
4
2
I
C
= 10A
0
4
8
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
FGL60N100BNTD Rev.A1
Fig 6. Saturation Voltage vs. V
GE
www.fairchildsemi.com
FGL60N100BNTD
10000
Cies
10000
V
CC
=600V, I
C
=60A
V
GE
=15V
Capacitance [pF]
T
C
=25 C
o
Tdoff
Tr
Tdon
Tf
Coes
100
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25 C
0
5
10
15
20
25
30
o
Switching Time [ns]
1000
1000
Cres
100
10
0
50
100
150
200
Collector-Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[?]
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs.
Gate Resistance
20
1000
V
CC
= 6 0 0 V , R g = 5 1
Ω
V
GE
= 1 5 V , T
C
= 2 5 C
T d o ff
o
Common Emitter
V
CC
=600V, R
L
=10
Ω
T
C
=25 C
o
Gate-Emitter Voltage,V
GE
[V]
15
Switching Time [ns]
10
Tf
Tr
5
100
T don
0
10
20
30
40
50
60
0
50
100
150
200
250
300
C o lle c to r C urre nt, I
C
[A ]
Gate Charge, Q
g
[nC]
Fig 9. Switching Characteristics vs.
Collector Current
Fig 10. Gate Charge Characteristics
I
C
MAX. (Pulsed)
50us
100us
10
DC Operation
1ms
10
Thermal Response, Z
θ
JC
[ C/W]
100
I
C
MAX. (Continuous)
Collector Current , I
C
[A]
o
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
10
-4
1
Single Nonrepetitive Pulse
o
T
C
= 25 C
Curve must be darated
linearly with increase
in temperature
0.1
1
10
100
1000
1E-3
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, V
CE
[V]
Rectangular Pulse Duration [sec]
Fig 11. SOA Characteristics
Fig 12. Transient Thermal Impedance of IGBT
FGL60N100BNTD Rev.A1
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
