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FGPF30N30T 300V, 30A PDP Trench IGBT
August 2007
FGPF30N30T
300V, 30A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: V
CE(sat)
=1.4V @ I
C
= 20A
• High input impedance
• Fast switching
• RoHS complaint
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Applications
• PDP System
C
G
TO-220F
1
1.Gate
2.Collector
3.Emitter
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C pulse (1)
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
=
25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Ratings
300
±
30
80
44.6
17.8
-55 to +150
-55 to +150
300
Units
V
V
A
W
W
o
C
o
C
o
C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJA
Notes :
(1) Repetitive tese, Pulse width = 100usec, Duty = 0.1
*I
C
_pluse limited by max Tj
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
Max.
2.8
62.5
Units
o
C/W
o
C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF30N30T Rev. A1
FGPF30N30T 300V, 30A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGPF30N30T
Device
FGPF30N30TTU
Package
TO-220F
Packaging
Type
Rail / Tube
Max Qty
Qty per Tube
50ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
∆BV
CES
/
∆T
J
I
CES
I
GES
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage V
GE
= 0V, I
C
= 250µA
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250µA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
300
-
-
-
-
0.26
-
-
-
-
100
±400
V
V/
o
C
µA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250µA, V
CE
= V
GE
I
C
= 10A
,
V
GE
= 15V
I
C
= 20A
,
V
GE
= 15V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 30A
,
V
GE
= 15V,
T
C
= 25
o
C
I
C
= 30A
,
V
GE
= 15V,
T
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
-
-
-
1540
65
55
--
--
--
pF
pF
pF
3.0
-
-
-
-
4.5
1.2
1.5
1.7
1.6
5.5
1.5
-
-
-
V
V
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V
CE
= 200V, I
C
= 20A,
V
GE
= 15V
V
CC
= 200V, I
C
= 20A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 125
o
C
V
CC
= 200V, I
C
= 20A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 25
o
C
-
-
-
-
-
-
-
-
-
-
-
22
33
130
180
21
34
140
260
65
10
26
--
--
--
300
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
2
FGPF30N30T Rev. A1
www.fairchildsemi.com
FGPF30N30T 300V, 30A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
80
T
C
= 25 C
o
Figure 2. Typical Saturation Voltage
Characteristics
80
T
C
= 125 C
o
20V
15V
12V
20V
12V
15V
10V
Collector Current, I
C
[A]
60
Collector Current, I
C
[A]
10V
60
40
40
V
GE
= 8V
V
GE
= 8V
20
20
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, V
CE
[V]
6.0
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, V
CE
[V]
6.0
Figure 3. Typical Saturation Voltage
Characteritics
80
Common Emitter
V
GE
= 15V
Figure 4. Transfer Characteristics
80
Common Emitter
V
CE
= 20V
Collector Current, I
C
[A]
60
Collector Current, I
C
[A]
T
C
= 25 C
T
C
= 125 C
o
o
T
C
= 25 C
o
60
T = 125
o
C
C
40
40
20
20
0
0
1
2
3
Collector-Emitter Voltage, V
CE
[V]
4
0
0
2
4
6
8
10
Gate-Emitter Voltage,V
GE
[V]
12
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage
,
V
CE
[V]
Common Emitter
V
GE
= 15V
Figure 6. Saturation Voltage vs. Vge
20
Common Emitter
T
C
= 25 C
o
1.8
30A
16
1.6
1.4
1.2
I
C
= 10A
12
20A
8
30A
20A
I
C
= 10A
1.0
0.8
25
4
50
75
100
125
o
Collector-EmitterCase Temperature, T
C
[
C
]
0
3
6
9
12
Gate-Emitter Voltage, V
GE
[V]
15
3
FGPF30N30T Rev. A1
www.fairchildsemi.com
FGPF30N30T 300V, 30A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter
T
C
= 125 C
o
(Continued)
Figure 8. Capacitance Characteristics
2500
Common Emitter
V
GE
= 0V, f = 1MHz
C
ies
Collector-Emitter Voltage, V
CE
[
V
]
16
Capacitance [pF]
2000
T
C
= 25 C
o
12
1500
8
30A
1000
C
oes
4
I
C
= 10A
20A
500
C
res
0
3
6
9
12
Gate-Emitter Voltage, V
GE
[V]
15
0
1
10
Collector-Emitter Voltage, V
CE
[V]
30
Figure 9. Gate Charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
300
Gate-Emitter Voltage, V
GE
[V]
T
C
= 25 C
100
Collector Current, I
c
[A]
I
C
MAX (Pulse)
50
µ
s
100
µ
s
12
V
CC
= 100V
9
200V
10
I
C
MAX (Continuous)
1ms
6
1
10 ms
Single Nonrepetitive
DC
o
3
0.1
Pulse T
C
= 25 C
Curves must be derated
linearly with increase
in temperature
0
0
20
40
60
Gate Charge, Q
g
[nC]
80
0.01
0.1
1
10
100
Collector-Emitter Voltage, V
CE
[V]
600
Figure 11. Turn-On Characteristics vs.
Gate Resistance
100
Figure 12. Turn-Off Characteristics vs.
Gate Resistance
1000
t
f
Switching Time [ns]
t
r
Switching Time [ns]
100
t
d(off)
t
d(on)
10
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
T
C
= 25 C
T
C
= 125 C
o
o
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
10
50
5
T
C
= 25 C
T
C
= 125 C
o
o
5
0
10
20
30
40
Gate Resistance, R
G
[
Ω
]
0
10
20
30
40
50
Gate Resistance, R
G
[
Ω
]
4
FGPF30N30T Rev. A1
www.fairchildsemi.com
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