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FJAF4310
FJAF4310
Audio Power Amplifier
•
•
•
•
High Current Capability : I
C
=10A
High Power Dissipation
Wide S.O.A
Complement to FJAF4210
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction to Case
Junction Temperature
Storage Temperature
Value
200
140
6
10
1.5
80
1.48
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C/W
°C
°C
R
θJC
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
C
ob
f
T
* Pulse Test : PW=20µs
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*
DC
Test Condition
I
C
=5mA, I
E
=0
I
C
=50mA, R
BE
=∞
I
E
=5mA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CB
=10V, f=1MHz
V
CE
=5V, I
C
=1A
Min.
200
140
6
Typ.
Max.
Units
V
V
V
10
10
50
250
30
180
0.5
µA
µA
V
pF
MHz
Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
h
FE
Classification
Classification
h
FE
R
50 ~ 100
O
70 ~ 140
Y
90 ~ 180
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
FJAF4310
Typical Characteristics
I
B
= 300mA
I
B
= 400mA
9
10
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
1000
V
CE
= 4 V
I
C
[A], COLLECTOR CURRENT
8
h
FE
, DC CURRENT GAIN
7
6
5
4
3
2
I
B
= 100mA
Ta = 25 C
Ta = 125 C
100
o
o
I
B
= 50mA
Ta = - 25 C
o
I
B
= 20mA
1
0
0
1
2
3
4
10
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characterstic
Figure 2. DC current Gain
3.0
1
I
C
= 10 I
B
V
CE
(sat) [V], SATURATION VOLTAGE
2.5
2.0
V
CE
(sat) [V], SATURATION VOLTAGE
Ta = 125 C
0.1
o
1.5
Ta = 25 C
o
1.0
Ta = - 25 C
o
0.5
I
C
= - 10A
I
C
= - 5A
0.0
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.01
0.1
1
10
I
B
[A], BASE CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. V
CE
(sat) vs. I
B
Characteristics
Figure 4. Collector-Emitter Saturation Voltage
10
V
CE
= 4 V
I
C
[A], COLLECTOR CURRENT
8
I
C
(Pulse)
t=10ms
t=100ms
10
Ic [A], COLLECTOR CURRENT
I
C
(DC)
6
4
Ta = 25 C
o
1
2
Ta = 125 C
Ta = - 25 C
o
o
T
C
=25
℃
Single Pulse
1.5
0
0.0
0.5
1.0
0.1
0.1
1
10
100
V
BE
[V], Base-Emitter On VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
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