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FJD3076TM

Description
2000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size861KB,7 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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FJD3076TM Overview

2000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, DPAK-3

FJD3076TM Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
package instructionLEAD FREE, DPAK-3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)2 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)130
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
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