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SSM6P25TU(5LOMII,F

Description
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size186KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

SSM6P25TU(5LOMII,F Overview

Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET

SSM6P25TU(5LOMII,F Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F6
Reach Compliance Codeunknown
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.5 A
Maximum drain-source on-resistance0.43 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
SSM6P25TU
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSIII)
SSM6P25TU
High Speed Switching Applications
Optimum for high-density mounting in small packages
Low on-resistance:
R
on
= 260mΩ (max) (@V
GS
= -4 V)
R
on
= 430mΩ (max) (@V
GS
= -2.5 V)
2.1±0.1
1.7±0.1
0.65 0.65
+0.1
0.3-0.05
Unit: mm
2.0±0.1
1.3±0.1
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
1
2
3
6
5
4
Rating
-20
±
12
-0.5
-1.5
500
150
−55
to 150
Unit
V
A
mW
°C
°C
0.7±0.05
V
T
ch
T
stg
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Note:
UF6
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2T1B
absolute maximum ratings.
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
2
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm )
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
PH
1
2
3
Q1
Q2
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2004-03
1
2014-03-01
+0.06
0.16-0.05
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