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S5566GTPA2

Description
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size54KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

S5566GTPA2 Overview

DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode

S5566GTPA2 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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