CM1431
LCD and Camera EMI Filter
Array with ESD Protection
Product Description
The CM1431 is a family of pi−style EMI filter arrays with ESD
protection, which integrates four, six and eight filters (C−R−C) in
small form factor WDFN 0.40 mm pitch packages. The CM1431 has
component values of 15 pF
−
100
W
−
15 pF per channel.
The CM1431 has a cut−off frequency of 120 MHz and can be used in
applications with data rates up to 48 Mbps. The parts include ESD
diodes on every pin, which provide a very high level of protection for
sensitive electronic components that may be subjected to electrostatic
discharge (ESD). The ESD protection diodes safely dissipate ESD
strikes of
±15
kV, well beyond the maximum requirement of
the IEC61000−4−2 international standard. Using the MIL−STD−883
(Method 3015) specification for Human Body Model (HBM) ESD,
the pins are protected for contact discharges at greater than
±30
kV.
These devices are particularly well−suited for portable electronics
(e.g. wireless handsets, PDAs, notebook computers) because of their
small package and easy−to−use pin assignments. In particular, the
CM1431 is ideal for EMI filtering and protecting data and control lines
for the I/O data ports, LCD display and camera interface in mobile
handsets.
The CM1431 is housed in space−saving, low−profile 8−, 12− and
16−lead WDFN packages with a 0.40 mm pitch and is available with
lead−free finishing. This smaller size WDFN package provides up to
42% board space saving vs. the 0.50 mm pitch WDFN packages.
Features
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WDFN8
DF/DE SUFFIX
CASE 511BF
WDFN12
DF/DE SUFFIX
CASE 511BC
WDFN16
DF/DE SUFFIX
CASE 511AW
BLOCK DIAGRAM
Filter
+
ESDn*
GND
100
W
15 pF
C
R
15 pF
C
Filter
+
ESDn*
1 of 4, 6 or 8 EMI/RFI + ESD Channels
* See Package/Pinout Diagrams for expanded pin information.
MARKING DIAGRAM
WF/WE
N31F/N31E
N318F/N318E
•
Four, Six and Eight Channels of EMI Filtering with Integrated
•
•
•
•
•
•
•
•
ESD Protection
Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C)
Network
±15
kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
±30
kV ESD Protection on Each Channel (HBM)
Greater than 35 dB Attenuation (Typical) at 1 GHz
WDFN Package with 0.40 mm Lead Pitch:
♦
4−ch. = 8−lead WDFN
♦
6−ch. = 12−lead WDFN
♦
8−ch. = 16−lead WDFN
Tiny WDFN Package Size:
♦
8−lead: 1.7 mm X 1.35 mm
♦
12−lead: 2.5 mm X 1.35 mm
♦
16−lead: 3.3 mm X 1.35 mm
Increased Robustness against Vertical Impacts During
Manufacturing Process
These Devices are Pb−Free and are RoHS Compliant
WF/WE
= CM1431−04DF/CM1431−04DE
N31F/N31E
= CM1431−06DF/CM1431−06DE
N318F/N318E = CM1431−08DF/CM1431−08DE
ORDERING INFORMATION
Device
CM1431−04DF
CM1431−04DE
CM1431−06DF
CM1431−06DE
CM1431−08DF
CM1431−08DE
Package
WDFN−8
(Pb−Free)
WDFN−8
(Pb−Free)
WDFN−12
(Pb−Free)
WDFN−12
(Pb−Free)
WDFN−16
(Pb−Free)
WDFN−16
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Applications
•
LCD and Camera Data Lines in Mobile Handsets
•
I/O Port Protection for Mobile Handsets, Notebook
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Computers, PDAs, etc.
•
EMI Filtering for Data Ports in Cell Phones, PDAs or
Notebook Computers
©
Semiconductor Components Industries, LLC, 2011
•
Wireless Handsets
•
Handheld PCs/PDAs
•
LCD and Camera Modules
1
Publication Order Number:
CM1431/D
March, 2011
−
Rev. 3
CM1431
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Rating
−65
to +150
100
500
Units
°C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
–40 to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
R
C
TOTAL
C
V
DIODE
I
LEAK
V
SIG
Resistance
Total Channel Capacitance
Capacitance C
Stand−off Voltage
Diode Leakage Current (Reverse Bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per
IEC 61000−4−2 Level 4
Dynamic Resistance
Positive
Negative
Cut−off Frequency
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
Absolute Attenuation @ 1 GHz from 0 dB Level
Absolute Attenuation @ 800 MHz to 6 GHz
from 0 dB Level
R = 100
W,
C = 15 pF
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W,
DC Bias = 0 V (Notes 1 and 3)
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W,
DC Bias = 0 V (Notes 1 and 3)
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
I
DIODE
= 10
mA
V
DIODE
= 3.3 V
I
LOAD
= 10 mA
I
LOAD
=
−10
mA
(Note 2)
5.6
−1.5
±30
±15
W
Parameter
Conditions
Min
80
24
12
Typ
100
30
15
6.0
0.1
6.8
−0.8
1.0
9.0
−0.4
Max
120
36
18
Units
W
pF
pF
V
mA
V
V
ESD
kV
R
DYN
2.3
0.9
110
35
30
f
C
A
1GHz
A
800Mhz to 6GHz
MHz
dB
dB
1. T
A
= 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
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3
Real-time operating system RTOS
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