24FC65/P datasheet, PDF - EEWORLD Datasheet

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24FC65/P: Description8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, DIP-8; Categorystorage storage; File Size232KB，12 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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24FC65/P Overview

8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, DIP-8

24FC65/P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	0.300 INCH, PLASTIC, DIP-8
Contacts	8
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED
Maximum clock frequency (fCLK)	1 MHz
Data retention time - minimum	200
Durability	1000000 Write/Erase Cycles
I2C control byte	1010DDDR
JESD-30 code	R-PDIP-T8
JESD-609 code	e0
length	9.46 mm
memory density	65536 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	8192 words
character code	8000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.32 mm
Serial bus type	I2C
Maximum standby current	0.000005 A
Maximum slew rate	0.003 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm
Maximum write cycle time (tWC)	5 ms
write protect	SOFTWARE
Base Number Matches	1

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24FC65

64K 5.0V 1 MHz CMOS Smart Serial™ EEPROM

FEATURES

• Voltage operating range: 4.5V to 5.5V

- Maximum write current 3 mA at 5.5V

- Maximum read current 150

µA

at 5.5V

- Standby current 1

µA

typical

• 1 MHz SE2.bus two wire protocol

• Programmable block security options

• Programmable endurance options

• Schmitt trigger inputs for noise suppression

• Self-timed ERASE (E) and WRITE (W) cycles

• Power on/off data protection circuitry

• Endurance:

10,000,000 E/W cycles guaranteed for a 4K

block

100,000 E/W cycles guaranteed for a 60K

block

• Variable page size up to 64 bytes

• 8 byte x 8 line input cache (64 bytes)

for fast write loads

• Electrostatic discharge protection > 4000V

• Data retention > 200 years

• 8-pin PDIP/SOIC packages

• Temperature ranges:

- Commercial: 0°C to +70°C

- Industrial: -40°C to +85°C

• <3 ms typical write cycle time, byte or page

• Up to 8 devices may be connected to the same

bus for up to 512K bits total memory

PACKAGE TYPE

PDIP

24FC65

SCL

SDA

SOIC

24FC65

SCL

SDA

BLOCK DIAGRAM

A0..A2

HV GENERATOR

DESCRIPTION

The Microchip Technology Inc. 24FC65 is a “smart”

8K 8x 8 Serial Electrically Erasable PROM (EEPROM)

with a high-speed 1MHz SE2.bus whose protocol is

functionally equivalent to the industry-standard I

bus. This device has been developed for advanced

applications such as personal communications, and

provides the systems designer with ﬂexibility through

the use of many new user-programmable features. The

24FC65 offers a relocatable 4K-bit block of

ultra-high-endurance memory for data that changes

frequently. The remainder of the array, or 60K bits, is

rated at 100,000 ERASE/WRITE (E/W) cycles

guaranteed. The 24FC65 features an input cache for

fast write loads with a capacity of eight pages, or 64

bytes. This device also features programmable

security options for E/W protection of critical data

and/or code of up to ﬁfteen 4K blocks. Functional

C is a trademark of Philips Corporation

Smart Serial is a trademark of Microchip Technology, Inc.

I/O

CONTROL

LOGIC

I/O

SCL

SDA

MEMORY

CONTROL

LOGIC

XDEC

EEPROM

ARRAY

PAGE LATCHES

CACHE

YDEC

SENSE AMP

R/W CONTROL

address lines allow the connection of up to eight

24FC65's on the same bus for up to 512K bits

contiguous EEPROM memory. The 24FC65 is

available in the standard 8-pin plastic DIP and 8-pin

surface mount SOIC package.

1995 Microchip Technology Inc.

DS21125A-page 1

24FC65/P Related Products

	24FC65/P	24FC65/SM	24FC65I/P	24FC65I/SM
Description	8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, DIP-8	8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8	8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, DIP-8	8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, EIAJ, PLASTIC, SOIC-8
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	SOIC	DIP	SOIC
package instruction	0.300 INCH, PLASTIC, DIP-8	0.207 INCH, PLASTIC, SOIC-8	0.300 INCH, PLASTIC, DIP-8	SOP,
Contacts	8	8	8	8
Reach Compliance Code	_compli	_compli	unknow	unknow
Maximum clock frequency (fCLK)	1 MHz	1 MHz	1 MHz	1 MHz
JESD-30 code	R-PDIP-T8	R-PDSO-G8	R-PDIP-T8	R-PDSO-G8
JESD-609 code	e0	e0	e0	e0
memory density	65536 bi	65536 bi	65536 bi	65536 bi
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	8	8	8	8
word count	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	85 °C
organize	8KX8	8KX8	8KX8	8KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	SOP	DIP	SOP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Serial bus type	I2C	I2C	I2C	I2C
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	YES	NO	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum write cycle time (tWC)	5 ms	5 ms	5 ms	5 ms
Base Number Matches	1	1	1	1

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