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FQD17N08LTM

Description
12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,12 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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FQD17N08LTM Overview

12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

FQD17N08LTM Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-252
package instructionDPAK-3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)100 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)12.9 A
Maximum drain-source on-resistance0.115 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)51.6 A
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
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FQD17N08LTM Related Products

FQD17N08LTM FQD17N08LTF
Description 12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Rochester Electronics Rochester Electronics
Parts packaging code TO-252 TO-252
package instruction DPAK-3 DPAK-3
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 100 mJ 100 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 80 V 80 V
Maximum drain current (ID) 12.9 A 12.9 A
Maximum drain-source on-resistance 0.115 Ω 0.115 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 TO-252
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 51.6 A 51.6 A
Certification status COMMERCIAL COMMERCIAL
surface mount YES YES
Terminal surface MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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