FQD17N08LTF datasheet, PDF - EEWORLD Datasheet

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FQD17N08LTF: Description12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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FQD17N08LTF Overview

12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

FQD17N08LTF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-252
package instruction	DPAK-3
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	12.9 A
Maximum drain-source on-resistance	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	51.6 A
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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FQD17N08LTF Related Products

	FQD17N08LTF	FQD17N08LTM
Description	12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3	12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Rochester Electronics	Rochester Electronics
Parts packaging code	TO-252	TO-252
package instruction	DPAK-3	DPAK-3
Contacts	3	3
Reach Compliance Code	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	80 V
Maximum drain current (ID)	12.9 A	12.9 A
Maximum drain-source on-resistance	0.115 Ω	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	TO-252
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	51.6 A	51.6 A
Certification status	COMMERCIAL	COMMERCIAL
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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