STK15C68-WF25 datasheet, PDF - EEWORLD Datasheet

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STK15C68-WF25: Description8KX8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28; Categorystorage storage; File Size354KB，10 Pages; ManufacturerCypress Semiconductor; Environmental Compliance

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STK15C68-WF25 Overview

8KX8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

STK15C68-WF25 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Cypress Semiconductor
Parts packaging code	DIP
package instruction	DIP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	25 ns
JESD-30 code	R-PDIP-T28
JESD-609 code	e3
length	36.83 mm
memory density	65536 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	4.57 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	15.24 mm

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STK15C68

8K x 8

AutoStore™

nvSRAM

QuantumTrap™

CMOS

Nonvolatile Static RAM

Obsolete - Not Recommend for new Deisgns

FEATURES

• Nonvolatile Storage without Battery Problems

• Directly Replaces 8K x 8 Static RAM, Battery-

Backed RAM or EEPROM

• 25ns, 35ns and 45ns Access Times

•

STORE

to Nonvolatile Elements Initiated by

Software or

AutoStore™

on Power Down

•

RECALL

to SRAM Initiated by Software or

Power Restore

• 10mA Typical I

at 200ns Cycle Time

• Unlimited READ, WRITE and

RECALL

Cycles

• 1,000,000

STORE

Cycles to Nonvolatile Ele-

ments

• 100-Year Data Retention over Full Industrial

Temperature Range

• No Data Loss from Undershoot

• Commercial and Industrial Temperatures

• 28-Pin 600 or 300 mil PDIP and 350 mil SOIC

Packages

DESCRIPTION

The STK15C68 is a fast

SRAM

with a nonvolatile ele-

ment incorporated in each static memory cell. The

SRAM

can be read and written an unlimited number of

times, while independent nonvolatile data resides in

Nonvolatile Elements. Data transfers from the

SRAM

the Nonvolatile Elements (the

STORE

operation) can

take place automatically on power down using charge

stored in system capacitance. Transfers from the Non-

volatile Elements to the

SRAM

(the

RECALL

operation)

take place automatically on restoration of power. Initia-

tion of

STORE

and

RECALL

cycles can also be con-

trolled by entering control sequences on the

SRAM

inputs. The STK15C68 is pin-compatible with 8k x 8

SRAM

s and battery-backed

SRAM

s, allowing direct

substitution while enhancing performance. A similar

device (STK16C68) with an internally integrated

capacitor is available for systems with very fast slew

rates. The STK12C68, which uses an external capaci-

tor, is an alternative for these applications.

BLOCK DIAGRAM

QUANTUM TRAP

128 x 512

STORE/

RECALL

CONTROL

PIN CONFIGURATIONS

ROW DECODER

STORE

STATIC RAM

ARRAY

128 x 512

RECALL

POWER

CONTROL

SOFTWARE

DETECT

INPUT BUFFERS

COLUMN I/O

COLUMN DEC

- A

28 - 300 PDIP

28 - 600 PDIP

28 - 350 SOIC

PIN NAMES

- A

Address Inputs

Write Enable

Data In/Out

Chip Enable

Output Enable

Power (+ 5V)

Ground

- DQ

March 2006

Document Control # ML0009 rev 0.2

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