CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA
x
Features
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
Low-power consumption
Battery backup operation
– 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-error
rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When
CS
goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as
CS
remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
x
x
x
x
x
x
x
x
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
A
10
128 X 128
MEMORY
ARRAY
GND
I/O
0
INPUT
DATA
CIRCUIT
I/O
7
I/O CONTROL
,
CS
OE
WE
CONTROL
CIRCUIT
3089 drw 01
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc.
DSC-3089/03
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and In dustrial Temperature Ranges
Pin Configurations
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A
8
A
9
Capacitance
(T
A
= +25°C, f = 1.0 MH
Z
)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
3089 tbl 03
P24-2
P24-1
D24-2
D24-1
SO24-2
SO24-4
WE
OE
A
10
CS
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
,
3089 drw 02
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Com'l.
-0.5 to +7.0
Mil.
-0.5 to +7.0
Unit
V
DIP/SOIC/SOJ
Top View
Pin Description
Name
A
0
- A
10
I/O
0
- I/O
7
CS
WE
OE
V
CC
GND
Description
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
Power
Ground
3089 tbl 01
T
A
T
BIAS
T
STG
P
T
I
OUT
0 to +70
-55 to +125
-55 to +125
1.0
50
-55 to +125
-65 to +135
-65 to +150
1.0
50
o
C
C
C
o
o
W
mA
3089 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V
TERM
must not exceed V
CC
+0.5V.
Truth Table
(1)
Mode
Standby
Read
Read
Write
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
I/O
High-Z
DATA
OUT
High-Z
DATA
IN
3089 tbl 02
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care.
2
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and In dustrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Grade
Military
Industrial
Commercial
Ambient
Temperature
-55 C to +125 C
-45
O
C to +85
O
C
0
O
C to +70
O
C
O
O
Recommended DC
Operating Conditions
Symbol
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
3.5
____
Max.
5.5
(2)
0
V
CC
+0.5
0.8
Unit
V
V
V
V
3089 tbl 06
GND
0V
0V
0V
Vcc
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
3089 tbl 05
V
CC
GND
V
IH
V
IL
NOTES:
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. V
IN
must not exceed V
CC
+0.5V.
DC Electrical Characteristics
(V
CC
= 5.0V ± 10%)
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
IDT6116SA
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= Max.,
V
IN =
GND to V
CC
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
I
OL
= 8mA, V
CC
= Min.
I
OH
= -4mA, V
CC
= Min.
MIL.
COM'L.
MIL.
COM'L.
Min.
____
____
____
____
IDT6116LA
Min.
____
____
____
____
Max.
10
5
10
5
0.4
____
Max.
5
2
5
2
0.4
____
Unit
µA
µA
V
V
3089 tbl 07
____
____
2.4
2.4
DC Electrical Characteristics
(1)
(V
CC
= 5.0V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
6116SA15
Symbol
I
CC1
Parameter
Operating Power Supply Current
CS
< V
IL
, Outputs Open
V
CC
= Max., f
=
0
Dynamic Operating Current
CS
< V
IL
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
Standby Power Supply Current
(TTL Level)
CS
> V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
Full Standby Power Supply Current
(CMOS Level)
CS
> V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
Power
SA
LA
SA
LA
SA
LA
SA
LA
Com'l
Only
105
95
150
140
40
35
2
0.1
6116SA20
6116LA20
Com'l
& Ind
105
95
130
120
40
35
2
0.1
Mil
130
120
150
140
50
45
10
0.9
6116SA25
6116LA25
Com'l
& Ind
80
75
120
110
40
35
2
0.1
Mil
90
85
135
125
45
40
10
0.9
6116SA35
6116LA35
Com'l.
& Ind.
80
75
100
95
25
25
2
0.1
Mil
90
85
115
105
35
30
10
0.9
3089 tbl 08
Unit
mA
I
CC2
mA
I
SB
mA
I
SB1
mA
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
, only address inputs are cycling at f
MAX,
f = 0 means address inputs are not changing.
6.42
3
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and In dustrial Temperature Ranges
DC Electrical Characteristics
(1)
(continued)
(V
CC
= 5.0V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
6116SA45
6116LA45
Symbol
I
CC1
Parameter
Operating Power Supply
Current,
CS
< V
IL
,
Outputs Open
V
CC
= Max., f
=
0
Dynamic Operating
Current,
CS
< V
IL
,
Outputs Open
V
CC
= Max., f = f
MAX
(2)
Standby Power Supply
Current (TTL Level)
CS
> V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
Full Standby Power
Supply Current (CMOS
Level),
CS
> V
HC
,
V
CC
= Max., V
IN
< V
LC
or V
IN
> V
HC
, f = 0
Power
SA
LA
SA
LA
SA
LA
SA
LA
Com'l
& Ind
80
75
100
90
25
20
2
0.1
Mil
90
85
100
95
25
20
10
0.9
6116SA55
6116LA55
Mil Only
90
85
100
90
25
20
10
0.9
6116SA70
6116LA70
Mil Only
90
85
100
90
25
20
10
0.9
6116SA90
6116LA90
Mil Only
90
85
100
85
25
25
10
0.9
6116SA120
6116LA120
Mil Only
90
85
100
85
25
15
10
0.9
6116SA150
6116LA150
Mil Only
90
85
90
85
25
15
10
0.9
3089 tbl 09
Unit
mA
I
CC2
mA
I
SB
mA
I
SB1
mA
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
, only address inputs are toggling at f
MAX
, f = 0 means address inputs are not changing.
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (V
LC
= 0.2V, V
HC
= V
CC
0.2V)
Typ.
(1)
V
CC
@
Symbol
V
DR
I
CCDR
t
CDR
(3)
t
R
(3)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
Test Condition
____
Max.
V
CC
@
3.0V
____
Min.
2.0
2.0V
____
2.0V
____
3.0V
____
Unit
V
µA
ns
MIL.
COM'L.
CS
> V
HC
V
IN
> V
HC
or < V
LC
____
____
0.5
0.5
0
1.5
1.5
____
200
20
____
300
30
____
____
t
RC
(2)
____
____
____
____
____
ns
µA
3089 tbl 10
I
I
LI
I
____
____
2
2
NOTES:
1. T
A
= + 25°C
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
4
MCU
京公网安备 11010802033920号
EEWORLD
