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MMSF7P03HDR2

Description
7 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size86KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MMSF7P03HDR2 Overview

7 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET

MMSF7P03HDR2 Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Contains lead
entfamilyid1037251
MakerON Semiconductor
Objectid1907569886
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Manufacturer packaging code751-07
Reach Compliance Code_compli
ECCN codeEAR99
compound_id1050674
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)5000 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)7 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)50 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
MMSF7P03HD
Preferred Device
Power MOSFET
7 A, 30 V, P−Channel SO−8
These miniature surface mount devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are DC−DC converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Features
http://onsemi.com
7 A, 30 V − R
DS(on)
= 35 mW
D
P−Channel
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS
Specified at Elevated Temperature
Mounting Information for SO−8 Package Provided
Pb−Free Package is Available
8
G
S
MARKING
DIAGRAM
8
SO−8
CASE 751
STYLE 12
1
S7P03
AYWWG
G
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Continuous
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
E
AS
Value
30
±
20
7.0
50
2.3
2.5
− 55 to 150
500
Unit
Vdc
Vdc
Adc
Apk
Adc
W
°C
mJ
1
Continuous @ T
A
= 25°C
Single Pulse (t
p
10
ms)
Source Current − Continuous @ T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C
(Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 32 Vdc, I
L
= 10 Apk,
L = 10 mH, R
G
= 25
W)
Thermal Resistance, Junction−to−Ambient
Maximum Temperature for Soldering
S7P03 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
R
qJA
T
50
260
°C/W
°C
Top View
ORDERING INFORMATION
Device
MMSF7P03HDR2
MMSF7P03HDR2G
Package
SO−8
Shipping
2500 / Tape&Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When mounted on 1 in square FR−4 or G−10 (V
GS
= 10 V @ 10 seconds)
SO−8
2500 / Tape&Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 7
Publication Order Number:
MMSF7P03HD/D

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MMSF7P03HDR2 MMSF7P03HD
Description 7 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET 7 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET
Number of components 1 1
Number of terminals 8 8
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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