N04L63W2AB7IT datasheet, PDF - EEWORLD Datasheet

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N04L63W2AB7IT: Description4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit; Categorystorage storage; File Size187KB，10 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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N04L63W2AB7IT Overview

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit

N04L63W2AB7IT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	BGA
package instruction	6 X 8 MM, BGA-48
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
length	8 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Humidity sensitivity level	1
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	3/3.3 V
Certification status	Not Qualified
Maximum seat height	1.34 mm
Maximum standby current	0.00001 A
Minimum standby current	1.8 V
Maximum slew rate	0.016 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	6 mm
Base Number Matches	1

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N04L63W2A

4Mb Ultra-Low Power Asynchronous CMOS SRAM

256K × 16 bit

Overview

The N04L63W2A is an integrated memory device

containing a 4 Mbit Static Random Access Memory

organized as 262,144 words by 16 bits. The device

is designed and fabricated using ON

Semiconductor’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with two chip enable

(CE1 and CE2) controls and output enable (OE) to

allow for easy memory expansion. Byte controls

(UB and LB) allow the upper and lower bytes to be

accessed independently and can also be used to

deselect the device. The N04L63W2A is optimal

for various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

temperature range of -40

C to +85

C and is

available in JEDEC standard packages compatible

with other standard 256Kb x 16 SRAMs

Features

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

4.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

0.8mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.8V

• Very fast output enable access time

25ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Compact space saving BGA package avail-

able

Product Family

Part Number

N04L63W2AB

N04L63W2AT

N04L63W2AB2

N04L63W2AT2

Package Type

48 - BGA

44 - TSOP II

48 - BGA Green

44 - TSOP II Green

70ns @ 2.7V

-40

C to +85

C 2.3V - 3.6V 55ns @ 2.7V

µA

2 mA @ 1MHz

Operating

Temperature

Power

Supply

(Vcc)

Speed

Options

Standby

Operating

Current (I

), Current (Icc),

Typical

Pin Configuration

CE1

I/O

VCC

VSS

I/O

ONE

I/O

VSS

VCC

I/O

CE2

I/O

CE1

I/O

CE2

I/O

Pin Descriptions

Pin Name

-A

CE1, CE2

I/O

-I/O

Pin Function

Address Inputs

Write Enable Input

Chip Enable Input

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

Power

Ground

Not Connected

N04L63W2A

TSOP-II

I/O

48 Pin BGA (top)

6 x 8 mm

July 2008 - Rev.

Publication Order Number:

N04L63W2A/D

N04L63W2AB7IT Related Products

	N04L63W2AB7IT	N04L63W2A	N04L63W2AB27IT	N04L63W2AB7I	N04L63W2AT7I	N04L63W2AT7IT
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit	4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit	4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit	4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit	4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit	4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit
Is it Rohs certified?	incompatible	-	conform to	incompatible	incompatible	incompatible
Maker	ON Semiconductor	-	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Parts packaging code	BGA	-	BGA	BGA	TSOP2	TSOP2
package instruction	6 X 8 MM, BGA-48	-	LFBGA, BGA48,6X8,30	6 X 8 MM, BGA-48	TSOP2-44	TSOP2-44
Contacts	48	-	48	48	44	44
Reach Compliance Code	compliant	-	compliant	compliant	not_compliant	compliant
ECCN code	3A991.B.2.A	-	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	70 ns	-	70 ns	70 ns	70 ns	70 ns
I/O type	COMMON	-	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B48	-	R-PBGA-B48	R-PBGA-B48	R-PDSO-G44	R-PDSO-G44
length	8 mm	-	8 mm	8 mm	18.41 mm	18.41 mm
memory density	4194304 bit	-	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	-	16	16	16	16
Humidity sensitivity level	1	-	-	1	1	1
Number of functions	1	-	1	1	1	1
Number of terminals	48	-	48	48	44	44
word count	262144 words	-	262144 words	262144 words	262144 words	262144 words
character code	256000	-	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C
organize	256KX16	-	256KX16	256KX16	256KX16	256KX16
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	-	LFBGA	LFBGA	LSSOP	LSSOP
Encapsulate equivalent code	BGA48,6X8,30	-	BGA48,6X8,30	BGA48,6X8,30	TSOP44,.46,32	TSOP44,.46,32
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	-	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	-	-	225	225	225
power supply	3/3.3 V	-	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.34 mm	-	1.34 mm	1.34 mm	1.25 mm	1.25 mm
Maximum standby current	0.00001 A	-	0.00001 A	0.00001 A	0.00001 A	0.00001 A
Minimum standby current	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V
Maximum slew rate	0.016 mA	-	0.016 mA	0.016 mA	0.016 mA	0.016 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.3 V	-	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	3 V	-	3 V	3 V	3 V	3 V
surface mount	YES	-	YES	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	-	BALL	BALL	GULL WING	GULL WING
Terminal pitch	0.75 mm	-	0.75 mm	0.75 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	6 mm	-	6 mm	6 mm	10.16 mm	10.16 mm
Base Number Matches	1	-	1	1	1	1

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