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1F3G

Description
1 A, 200 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size140KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Download Datasheet Parametric Compare View All

1F3G Overview

1 A, 200 V, SILICON, SIGNAL DIODE

1F3G Parametric

Parameter NameAttribute value
MakerGulf Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
1F1G THRU 1F7G
FAST RECOVERY GLASS PASSIVATED
JUNCTION RECTIFIER
VOLTAGE: 50 TO 1000V
CURRENT: 1.0A
FEATURE
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed
250°C /10sec/0.375" lead length at 5 lbs tension
Glass Passivated chip
R-1
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8
"
lead length at Ta =50
°
C
Peak Forward Surge Current 8.3ms single
Half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
rated forward current
Maximum full load reverse current
full cycle at T
L
=75
°
C
Maximum DC Reverse Current
Ta =25
°
C
at rated DC blocking voltage
Ta =100
°
C
Typical Junction Capacitance
(Note 1)
Maximum Reverse Recovery Time (Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir(av)
Ir
Cj
Trr
1F
1G
50
35
50
1F
2G
100
70
100
1F
3G
200
140
200
1F
4G
400
280
400
1.0
30.0
1.3
30.0
5.0
100.0
15.0
1F
5G
600
420
600
1F
6G
800
560
800
1F
7G
1000
700
1000
units
V
V
V
A
A
V
µ
A
µ
A
µ
A
150
50.0
-55 to +150
250
500
pF
nS
Operating Temperature
(Note 3)
Storage and Operation Junction Temperature
R(ja)
Tstg, Tj
°
/W
C
°
C
Note:
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Test Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted
Rev.4
www.gulfsemi.com

1F3G Related Products

1F3G 1F1G 1F5G 1F2G 1F4G
Description 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE
Maker Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknow unknow unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 50 V 600 V 100 V 400 V
Maximum reverse recovery time 0.15 µs 0.15 µs 0.25 µs 0.15 µs 0.15 µs
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
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