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1N5407

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size157KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Environmental Compliance
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1N5407 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

1N5407 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGulf Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknow
Other featuresLOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
1N5400 THRU 1N5408
GENERAL PURPOSE
PLASTIC RECTIFIER
VOLTAGE:50 TO 1000V
CURRENT:3.0A
FEATURE
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed
250°C/10sec/0.375”lead length at 5 lbs tension
DO-201AD
MECHANICAL DATA
Terminal:Plated axial leads solderable per
MIL-STD 202E, method 208C
Case:Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity:color band denotes cathode
Mounting position:any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
1N
5400
50
35
50
1N
5401
100
70
100
1N
5402
200
140
200
1N
5403
300
210
300
1N
5404
400
280
400
3.0
200.0
1.1
30.0
5.0
500.0
30.0
20.0
-50 to +150
1N
5405
500
350
500
1N
5406
600
420
600
1N
5407
800
560
800
1N
5408
1000
700
1000
units
V
V
V
A
A
V
µA
µA
µA
pF
°C/W
°C
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =80°C
Peak Forward Surge Current 8.3ms single
Half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir(av)
Ir
Cj
R(ja)
Tstg
rated forward current
Maximum full load reverse current
full cycle at T
L
=75°C
Maximum DC Reverse Current
Ta =25°C
at rated DC blocking voltage
Ta =150°C
Typical Junction Capacitance
(Note 1)
Typical Thermal Resistance
(Note 2)
Storage and Operation Junction Temperature
Note:
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted
Rev.A5
www.gulfsemi.com

1N5407 Related Products

1N5407 1N5400 1N5401 1N5403 1N5402 1N5404 1N5405 1N5406 1N5408
Description 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE,1KV V(RRM),DO-204AE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknown unknow unknow
Other features LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Humidity sensitivity level 1 1 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 800 V 50 V 100 V 300 V 200 V 400 V 500 V 600 V 1000 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
surface mount NO NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maker Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor - Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor
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