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1N5819

Description
1 A, 45 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size83KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Environmental Compliance
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1N5819 Overview

1 A, 45 V, SILICON, SIGNAL DIODE

1N5819 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGulf Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.6 V
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
1N5817 THRU 1N5819
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 40V
CURRENT: 1.0A
FEATURE
High current capability, Low forward voltage drop
Low power loss, high efficiency
High surge capability
High temperature soldering guaranteed
250°C /10sec/0.375" lead length at 5 lbs tension
DO-41\ DO-204AL
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYM
BOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/" lead length at T
L
=90°
C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.1A DC
Maximum DC Reverse Current
at rated DC blocking voltage
Typical Junction Capacitance
Typical Thermal Resistance
Ta =25°
C
Ta =100°
C
(Note 1)
(Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Vf
Ir
Cj
R(ja)
Tstg,
Tj
0.45
0.75
1N
5817
20
14
20
1N
5818
30
21
30
1.0
25.0
0.55
0.875
1.0
10.0
110
50
-65 to +125
0.60
0.90
1N
5819
40
28
40
units
V
V
V
A
A
V
V
mA
mA
pF
° /W
C
°
C
Storage and Operating Junction Temperature
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.5" lead length, vertical P.C. Board Mounted
Rev.A4
www.gulfsemi.com

1N5819 Related Products

1N5819 1N5817 1N5818
Description 1 A, 45 V, SILICON, SIGNAL DIODE RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
Is it Rohs certified? conform to conform to conform to
Maker Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.6 V 0.45 V 0.55 V
JEDEC-95 code DO-204AL DO-204AL DO-204AL
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Humidity sensitivity level 1 1 1
Maximum non-repetitive peak forward current 25 A 25 A 25 A
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Maximum output current 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 40 V 20 V 30 V
surface mount NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
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