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1N5820

Description
RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size92KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Environmental Compliance
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1N5820 Overview

RECTIFIER DIODE

1N5820 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionPLASTIC PACKAGE-2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage20 V
Maximum reverse current2000 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N5820 THRU 1N5822
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 40V
CURRENT: 3.0A
FEATURE
High current capability, Low forward voltage drop
Low power loss, high efficiency
High surge capability
High temperature soldering guaranteed
250°C /10sec/0.375" lead length at 5 lbs tension
DO-201AD
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8" lead length at T
L
=95°
C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at 3.0A DC (Note 3)
Maximum Forward Voltage at 9.4A DC (Note 3)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Vf
0.475
0.850
1N
5820
20
14
20
1N
5821
30
21
30
3.0
80.0
0.500
0.900
2.0
20.0
250
40
-55 to +125
0.525
0.950
1N
5822
40
28
40
units
V
V
V
A
A
V
V
mA
mA
pF
° /W
C
°
C
Maximum DC Reverse Current
Ta =25°
C
Ir
at rated DC blocking voltage (Note 3) Ta =100°C
Typical Junction Capacitance
(Note 1)
Cj
Typical Thermal Resistance
(Note 2)
R(ja)
Storage and Operating Junction Temperature
Tstg, Tj
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.5" lead length, vertical P.C. Board Mounted
3. Pulse test 300
µ
s pulse Width, 1%Duty Cycle
Rev.A5
www.gulfsemi.com

1N5820 Related Products

1N5820 1N5821
Description RECTIFIER DIODE RECTIFIER DIODE, DO-201AD
Is it Rohs certified? conform to conform to
package instruction PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS
application EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.85 V 0.9 V
JEDEC-95 code DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 80 A 80 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 20 V 30 V
Maximum reverse current 2000 µA 2000 µA
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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