IRFY430M-T257
MECHANICAL DATA
Dimensions in mm (inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES
16.38 (0.645)
16.89 (0.665)
13.38 (0.527)
13.64 (0.537)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1 2 3
12.07 (0.500)
19.05 (0.750)
500V
4.5A
1.65
W
0.64 (0.025)
Dia.
0.89 (0.035)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
• HERMETICALLY SEALED TO257 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
TO257AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
T
L
R
q
JC
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
(V
GS
= 10V , T
case
= 25°C)
(V
GS
= 10V , T
case
= 100°C)
±20V
4.5A
2.8A
18A
75W
0.6W/°C
–55 to 150°C
300°C
1.67°C/W max.
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 1/00
IRFY430M-T257
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
³
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
V
GS
= 10V
V
DS
= 0.5BV
DSS
V
DD
= 250V
I
D
=3.7A
R
G
= 7.5
W
V
GS
= 10V
I
D
= 3.7A
I
D
=3.7A
I
D
= 2.4A
I
D
= 3.7A
I
D
= 250
m
A
I
DS
= 2.4A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
500
Typ.
Max.
Unit
V
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On–State
Resistance
1
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Reference to 25°C
0.78
1.65
1.84
2
1.5
25
250
100
–100
610
135
65
19.8
2.2
5.5
29.5
4.6
19.7
35
30
55
30
3.7
14
4
V / °C
W
V
)
W
(
S(
W
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
m
A
nA
pF
nC
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(6mm down drain lead to centre of die)
Internal Source Inductance
(6mm down source lead to centre of source bond pad)
I
S
= 3.7A
V
GS
= 0
I
S
= 3.7A
T
J
= 25°C
Negligible
8.7
8.7
d
i
/ d
t
£
100A/
m
s V
DD
£
50V
T
C
= 25°C
A
V
ns
1.4
900
7.0
m
C
nH
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 1/00
Embedded System
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