FJAF6810A
FJAF6810A
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BV
CBO
= 1550V
• High Switching Speed : t
F
(typ.) =0.1µs
• For Color Monitor
TO-3PF
1
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Rating
1550
750
6
10
20
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CES
I
CBO
I
EBO
BV
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
STG
*
t
F
*
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Base-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
Test Conditions
V
CB
=1400V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
E
=500µA, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=6A
I
C
=6A, I
B
=1.5A
I
C
=6A, I
B
=1.5A
V
CC
=200V, I
C
=6A, R
L
=33
Ω
I
B1
=1.2A, I
B2
= - 2.4A
6
10
5
8
3
1.5
3
0.2
V
V
µs
µs
Min
Typ
Max
1
10
1
Units
mA
µA
mA
V
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol
R
θjC
Parameter
Thermal Resistance, Junction to Case
Typ
Max
2.08
Units
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
FJAF6810A
Typical Characteristics
10
100
I
B
=2.0A
V
CE
= 5V
Ta = 125 C
0
I
C
[A], COLLECTOR CURRENT
8
6
h
FE
, DC CURRENT GAIN
Ta = 25 C
0
Ta = - 25 C
10
0
I
B
=0.6A
4
I
B
=0.4A
I
B
=0.2A
2
0
0
2
4
6
8
10
12
14
1
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
I
C
= 5 I
B
V
CE
(sat) [V], SATURATION VOLTAGE
10
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
= 3 I
B
1
Ta = 25 C
Ta = 125 C
0
0
1
Ta = 125 C
Ta = 25 C
Ta = - 25 C
0.1
0
0
0
0.1
Ta = - 25 C
0
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
14
10
V
CE
= 5V
12
V
CC
= 200V,
I
C
= 6A, I
B1
= 1.2A
I
C
[A], COLLECTOR CURRENT
t
STG
& t
F
[
µ
s], SWITCHING TIME
10
t
STG
1
8
6
0.1
t
F
4
Ta = 125 C
2
0
25 C
0
- 25 C
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
1
10
V
BE
[V], BASE-EMITTER VOLTAGE
I
B2
[A], REVERSE BASE CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
FJAF6810A
Typical Characteristics
(Continued)
100
10
V
CC
= 200V,
I
C
= 6A, I
B2
= - 2.4A
10
V
CC
= 200V,
I
B1
= 1.0A, I
B2
= - 2.4A
t
STG
t
STG
& t
F
[
µ
s], SWITCHING TIME
t
STG
& t
F
[
µ
s], SWITCHING TIME
t
STG
1
1
t
F
t
F
0.1
0.01
1
10
0.1
1
10
I
B1
[A], FORWARD BASE CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
30
100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
25
R
B2
= 0, I
B1
= 15A
V
CC
= 30V, L = 200
µ
H
10
I
C
(Pulse) t = 100ms t = 10ms
I
C
(DC)
20
t = 1ms
15
1
10
V
BE
(off) = - 6V
5
0.1
V
BE
(off) = - 3V
1
10
T
C
= 25 C
Sigle Pulse
0.01
1
10
100
1000
10000
o
100
1000
10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
Figure 10. Forward Bias Safe Operating Area
80
70
P
D
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
C o
75
100
125
150
175
200
T [ C], CASE TEMPERATURE
Figure 11. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
FJAF6810A
Package Dimensions
TO-3PF
5.50
±0.20
4.50
±0.20
15.50
±0.20
ø3.60
±0.20
3.00
±0.20
(1.50)
10.00
±0.20
10
°
26.50
±0.20
23.00
±0.20
16.50
±0.20
14.50
±0.20
0.85
±0.03
16.50
±0.20
2.00
±0.20
14.80
±0.20
2.00
±0.20
2.00
±0.20
4.00
±0.20
0.75
–0.10
+0.20
2.00
±0.20
2.50
±0.20
2.00
±0.20
3.30
±0.20
5.45TYP
[5.45
±0.30
]
5.45TYP
[5.45
±0.30
]
0.90
–0.10
+0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
1.50
±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
22.00
±0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
ActiveArray™
FAST
®
FASTr™
Bottomless™
FRFET™
CoolFET™
CROSSVOLT™
GlobalOptoisolator™
GTO™
DOME™
HiSeC™
EcoSPARK™
2
CMOS™
I
2
C™
E
EnSigna™
ImpliedDisconnect™
FACT™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
DISCLAIMER
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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®
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TruTranslation™
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UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I5
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