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GSIB2520

Description
3.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size137KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Download Datasheet Parametric Compare View All

GSIB2520 Overview

3.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

GSIB2520 Parametric

Parameter NameAttribute value
MakerGulf Semiconductor
package instructionR-PSFM-T4
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current350 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
GSIB2505 THRU
GSIB25100
SINGLE PHASE GLASS
PASSIVATED BRIDGE RECTIFIER
Voltage: 50
to
1000V
Current: 25.0A
Features
Glass passivated chip junction
Ideal for printed circuit board
High surge current capability
High case dielectric strength
This series is UL listed under Recognized Component Index,
file number E185029
GSIB-5S
Mechanical Data
Terminal: Plated leads solderable per MIL-STD 202E,
Method 208C
Case: UL-94 Class V-0 recognized Flame Retardant Epoxy
Polarity: Polarity symbol marked on body
Mounting position: any
Dimensions in millimeters
MAXIMUM
RATINGS AND ELECTRICAL
CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
Symbol
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
Tc = 98℃(Note 1)
Rectified output current at
Ta = 25℃(Note 2)
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage drop per
leg at 12.5A
Rating for fusing (t < 8.3ms)
Maximum DC reverse current at
rated DC blocking voltage per leg
Maximum thermal resistance per leg
Ta = 25°
C
Ta = 125°
C
(Note2)
(Note1)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
I
2
t
Ir
Rth(ja)
Rth(jc)
Tj, Tstg
GSIB2
505
50
35
50
GSIB2
510
100
70
100
GSIB2
520
200
140
200
GSIB2
540
400
280
400
25.0
3.5
350
1.0
500
10.0
350
22.0
1.0
-55 to +150
GSIB2
560
600
420
600
GSIB2
580
800
560
800
GSIB2
5100
1000
700
1000
units
V
V
V
A
A
V
A
2
Sec
µA
℃/W
Operating junction and storage temperature range
Note:
1. Unit case mounted onAl plate heatsink
2. Unit case mounted on P.C.B. with heatsink
3. Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
Rev.A8
www.gulfsemi.com

GSIB2520 Related Products

GSIB2520 GSIB2505 GSIB25100 GSIB2510 GSIB2560
Description 3.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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