LLB005 datasheet, PDF - EEWORLD Datasheet

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LLB005: DescriptionSINGLE PHASE GLASS PASSIVATED SURFACE MOUNT FLAT BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A; CategoryDiscrete semiconductor diode; File Size123KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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LLB005 Overview

SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT FLAT BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A

LLB005 Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	50 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	50 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

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LLB005 THRU LLB10

SINGLE PHASE GLASS PASSIVATED

SURFACE MOUNT FLAT BRIDGE RECTIFIER

VOLTAGE: 50 TO 1000V

CURRENT: 1.0A

FEATURE

Ideal for printed circuit board

Glass passivated chip

Reliable low cost construction utilizing molded plastic

technique

High surge current capability

Small size, simple installation

High temperature soldering guaranteed:

260℃/10 seconds/0.375” lead length at 5 lbs tension

LBF

MECHANICAL DATA

Terminal: Plated leads solderable per

MIL-STD 202E, method 208C

Case:UL-94 Class V-0 recognized Flame Retardant Epoxy

Polarity: Polarity symbol marked on body

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

Symbol

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward on aluminum substrate

Rectified Current

on glass-epoxy P.C.B.

Peak Forward Surge Current 8.3ms single half sine-

wave superimposed on rated load

Maximum Instantaneous Forward Voltage at forward

current 0.4A

Maximum DC Reverse Current

Ta =25℃

at rated DC blocking voltage

Ta =125℃

Typical Thermal resistance

junction to lead

on aluminum substrate

on glass-epoxy P.C.B.

Storage and Operating Junction Temperature Range

Note:

Vrrm

Vrms

VDC

If(av)

Ifsm

Vf

Ir

Rth(jl)

Rth(ja)

Tstg, Tj

LLB

005

50

35

50

LLB

01

100

70

100

LLB

02

200

140

200

LLB

04

400

280

400

1.0

0.8

30.0

0.95

5.0

100.0

25

62.5

80

-55 to +150

LLB

06

600

420

600

LLB

08

800

560

800

LLB

10

1000

700

1000

Units

V

A

V

µA

℃/W

℃

Rev.A1

www.gulfsemi.com

LLB005 Related Products

	LLB005	LLB01	LLB04	LLB02	LLB08	LLB06
Description	SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT FLAT BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A	SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT FLAT BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A	SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT FLAT BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A	SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT FLAT BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A	SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT FLAT BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A	SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT FLAT BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
package instruction	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	50 V	100 V	400 V	200 V	800 V	600 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	4	4	4	4	4	4
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	50 V	100 V	400 V	200 V	800 V	600 V
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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