P600D datasheet, PDF - EEWORLD Datasheet

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P600D: Description6 A, 200 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size174KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/; Environmental Compliance

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P600D Overview

6 A, 200 V, SILICON, RECTIFIER DIODE

P600D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Gulf Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknow
Other features	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PALF-W2
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-50 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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P600A THRU P600M

GENERAL PURPOSE

PLASTIC RECTIFIER

VOLTAGE:50 TO 1000V

CURRENT: 6.0A

P600\R-6

FEATURE

Molded case feature for auto insertion

High current capability

Low leakage current

High surge capability

High temperature soldering guaranteed

250°C/10sec/0.375”lead length at 5 lbs tension

MECHANICAL DATA

Terminal:Plated axial leads solderable per

MIL-STD 202E, method 208C

Case:Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity:color band denotes cathode

Mounting position:any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

SYMBO

P600A

P600B

P600D

P600G

P600J

P600K

P600M

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8”lead length at Ta =63°C

Peak Forward Surge Current 8.3ms single

Half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

rated forward current

Maximum full load reverse current

full cycle at T

=75°C

Maximum DC Reverse Current

at rated DC blocking voltage

Typical Junction Capacitance

Typical Thermal Resistance

Ta =25°C

Ta =100°C

(Note 1)

(Note 2)

Vrrm

Vrms

Vdc

If(av)

Ifsm

Ir(av)

R(ja)

Tstg

100

200

140

200

400

280

400

6.0

400.0

1.1

50.0

10.0

100.0

150.0

10.0

-50 to +175

600

420

600

800

560

800

1000

700

1000

µA

°C/W

Storage and Operation Junction Temperature

°C

Note:

1. Measured at 1.0 MHz and applied voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted

Rev.4

www.gulfsemi.com

P600D Related Products

	P600D	P600A	P600B	P600J	P600G	P600K	P600M
Description	6 A, 200 V, SILICON, RECTIFIER DIODE	6 A, 50 V, SILICON, RECTIFIER DIODE	6 A, 100 V, SILICON, RECTIFIER DIODE	6 A, 600 V, SILICON, RECTIFIER DIODE	6 A, 400 V, SILICON, RECTIFIER DIODE	6 A, 800 V, SILICON, RECTIFIER DIODE	6 A, 1000 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Other features	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Humidity sensitivity level	1	1	1	1	1	1	1
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	6 A	6 A	6 A	6 A	6 A	6 A	6 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	200 V	50 V	100 V	600 V	400 V	800 V	1000 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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