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MP310

Description
Small Signal Bipolar Transistor, 0.02A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, TO-52,
CategoryDiscrete semiconductor    The transistor   
File Size153KB,3 Pages
ManufacturerMicro Power Systems
Download Datasheet Parametric Compare View All

MP310 Overview

Small Signal Bipolar Transistor, 0.02A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, TO-52,

MP310 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Power Systems
Reach Compliance Codeunknown
Other featuresMATCHED PAIR
Maximum collector current (IC)0.02 A
Collector-based maximum capacity2 pF
Collector-emitter maximum voltage25 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)150
JEDEC-95 codeTO-52
JESD-30 codeO-MBCY-W6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.25 V

MP310 Related Products

MP310 MP312A MP311
Description Small Signal Bipolar Transistor, 0.02A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, TO-52, Small Signal Bipolar Transistor, 0.02A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, TO-52, Small Signal Bipolar Transistor, 0.02A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, TO-52,
Is it Rohs certified? incompatible incompatible incompatible
Maker Micro Power Systems Micro Power Systems Micro Power Systems
Reach Compliance Code unknown unknown unknown
Other features MATCHED PAIR MATCHED PAIR MATCHED PAIR
Maximum collector current (IC) 0.02 A 0.02 A 0.02 A
Collector-based maximum capacity 2 pF 2 pF 2 pF
Collector-emitter maximum voltage 25 V 45 V 45 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 150 200 150
JEDEC-95 code TO-52 TO-52 TO-52
JESD-30 code O-MBCY-W6 O-MBCY-W6 O-MBCY-W6
JESD-609 code e0 e0 e0
Number of components 2 2 2
Number of terminals 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.25 V 0.25 V 0.25 V
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