MP311 datasheet, PDF - EEWORLD Datasheet

MP311: DescriptionSmall Signal Bipolar Transistor, 0.02A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, TO-52,; CategoryDiscrete semiconductor The transistor; File Size153KB，3 Pages; ManufacturerMicro Power Systems

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MP311 Overview

Small Signal Bipolar Transistor, 0.02A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, TO-52,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micro Power Systems
Reach Compliance Code	unknown
Other features	MATCHED PAIR
Maximum collector current (IC)	0.02 A
Collector-based maximum capacity	2 pF
Collector-emitter maximum voltage	45 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	150
JEDEC-95 code	TO-52
JESD-30 code	O-MBCY-W6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.25 V

	MP311	MP310	MP312A
Description	Small Signal Bipolar Transistor, 0.02A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, TO-52,	Small Signal Bipolar Transistor, 0.02A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, TO-52,	Small Signal Bipolar Transistor, 0.02A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, TO-52,
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Micro Power Systems	Micro Power Systems	Micro Power Systems
Reach Compliance Code	unknown	unknown	unknown
Other features	MATCHED PAIR	MATCHED PAIR	MATCHED PAIR
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A
Collector-based maximum capacity	2 pF	2 pF	2 pF
Collector-emitter maximum voltage	45 V	25 V	45 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	150	150	200
JEDEC-95 code	TO-52	TO-52	TO-52
JESD-30 code	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6
JESD-609 code	e0	e0	e0
Number of components	2	2	2
Number of terminals	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.25 V	0.25 V	0.25 V

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