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JANS2N2919L

Description
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size341KB,23 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANS2N2919L Overview

Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, 6 PIN

JANS2N2919L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-78
package instructionCYLINDRICAL, O-MBCY-W6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)150
JESD-30 codeO-MBCY-W6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusQualified
GuidelineMIL-19500
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 12 June 2013.
INCH-POUND
MIL-PRF-19500/355R
12 March 2013
SUPERSEDING
MIL-PRF-19500/355P
9 December 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,
JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR,
JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH,
JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators “M”, “D”, “P“, “L”,
“R”, “F”, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.
1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and
JANKCA die), and figure 4 (JANHCB and JANKCB die).
1.3 Maximum ratings. Unless otherwise specified, T
C
=+25°C.
Type
I
C
mA dc
All types
30
V
CBO
V dc
70
V
CEO
V dc
60
V
EBO
V dc
6
P
T
(1)
T
A
= +25°C
One
section
mW
200
Both
sections
mW
350
P
T
(2)
T
C
= +25°C
One
section
mW
300
Both
sections
mW
450
One
section
°C/W
875
R
θJA
Both
sections
°C/W
500
One
section
°C/W
583
R
θJC
Both
sections
°C/W
388
T
J
and T
STG
°C
-65 to +200
(1) For T
A
> +25°C, derate linearly 1.143 mW/°C, one section; 2.000 mW/°C, both sections.
(2) For T
C
> +25°C, derate linearly 1.714 mW/°C, one section; 2.571 mW/°C, both sections.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at
https://assist.dla.mil
.
AMSC N/A
FSC 5961
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