TRANSISTOR 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | BUILT-IN BIAS RESISTOR |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 45 V |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Minimum DC current gain (hFE) | 2000 |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| Maximum off time (toff) | 1300 ns |
| Maximum opening time (tons) | 500 ns |
| VCEsat-Max | 1.6 V |
| BSR50-T/R | BSR52-AMMO | BSR50-AMMO | BSR51-AMMO | BSR51-T/R | |
|---|---|---|---|---|---|
| Description | TRANSISTOR 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | TRANSISTOR 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal |
| package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A |
| Collector-emitter maximum voltage | 45 V | 80 V | 45 V | 60 V | 60 V |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Minimum DC current gain (hFE) | 2000 | 2000 | 2000 | 2000 | 2000 |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | AMPLIFIER | SWITCHING | SWITCHING | SWITCHING | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 1300 ns | 1500 ns | 1500 ns | 1500 ns | 1300 ns |
| VCEsat-Max | 1.6 V | 1.6 V | 1.6 V | 1.6 V | 1.6 V |
| Maker | NXP | - | NXP | NXP | NXP |
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