Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
| Parameter Name | Attribute value |
| Maker | Motorola ( NXP ) |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 45 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JEDEC-95 code | TO-236AB |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 0.225 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| VCEsat-Max | 0.7 V |
| BC807-16LT3 | BC807-40LT3 | BC807-25LT3 | |
|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | 500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.5 A | 0.5 A | 0.5 A |
| Collector-emitter maximum voltage | 45 V | 45 V | 45 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 100 | 250 | 160 |
| JEDEC-95 code | TO-236AB | TO-236AB | TO-236AB |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP | PNP |
| Maximum power consumption environment | 0.225 W | 0.225 W | 0.225 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 200 MHz | 200 MHz | 200 MHz |
| VCEsat-Max | 0.7 V | 0.7 V | 0.7 V |
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