W06M datasheet, PDF - EEWORLD Datasheet

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W06M: Description1.5 A, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size3MB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/; Environmental Compliance

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W06M Overview

1.5 A, SILICON, BRIDGE RECTIFIER DIODE

W06M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Gulf Semiconductor
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	50 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	1.5 A
Maximum repetitive peak reverse voltage	600 V
surface mount	NO

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W005M THRU W10M

SINGLE PHASE SILICON

BRIDGE RECTIFIER

VOLTAGE: 50 TO 1000V

CURRENT: 1.5A

FEATURE

Ideal for printed circuit board

Surge overload rating: 50 A peak

High case dielectric strength

WOM

MECHANICAL DATA

Terminal: Plated leads solderable per

MIL-STD 202E, method 208C

Case: UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: Polarity symbol marked on body

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current at Ta =25

°C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

forward current 1.5A DC

Maximum DC Reverse Current

at rated DC blocking voltage

Operating Temperature Range

Ta =25

°C

Ta =100

°C

Vrrm

Vrms

Vdc

If(av)

Ifsm

Vf

Ir

Tj

Tstg

W005

M

50

35

50

W01

M

100

70

100

W02

M

200

140

200

W04

M

400

280

400

1.5

50.0

1.0

W06

M

600

420

600

W08

M

800

560

800

W10

M

1000

700

1000

units

V

A

V

µ

A

Storage and Operation Junction Temperature

10.0

1.0

-55 to +125

-55 to +150

mA

°C

Rev.A4

www.gulfsemi.com

W06M Related Products

	W06M	W01M	W005M	W04M	W02M	W08M	W10M
Description	1.5 A, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	GENESIC SEMICONDUCTOR - W04M - BRIDGE RECTIFIER; 1PH; 1.5A; 400V; DOB	GENESIC SEMICONDUCTOR - W02M - BRIDGE RECTIFIER; 1PH; 1.5A; 200V; DOB	1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),BR-1W
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
Reach Compliance Code	unknow	unknow	unknown	unknow	unknow	unknow	unknow
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V	1 V	1 V
Humidity sensitivity level	1	1	1	1	1	1	1
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	4	4	4	4	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
Maximum repetitive peak reverse voltage	600 V	100 V	50 V	400 V	200 V	800 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO	NO

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