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W01M

Description
1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size3MB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Environmental Compliance
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W01M Overview

1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

W01M Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGulf Semiconductor
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature125 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
W005M THRU W10M
SINGLE PHASE SILICON
BRIDGE RECTIFIER
VOLTAGE: 50 TO 1000V
CURRENT: 1.5A
FEATURE
Ideal for printed circuit board
Surge overload rating: 50 A peak
High case dielectric strength
WOM
MECHANICAL DATA
Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
Case: UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: Polarity symbol marked on body
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current at Ta =25
°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
forward current 1.5A DC
Maximum DC Reverse Current
at rated DC blocking voltage
Operating Temperature Range
Ta =25
°C
Ta =100
°C
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Tj
Tstg
W005
M
50
35
50
W01
M
100
70
100
W02
M
200
140
200
W04
M
400
280
400
1.5
50.0
1.0
W06
M
600
420
600
W08
M
800
560
800
W10
M
1000
700
1000
units
V
V
V
A
A
V
µ
A
Storage and Operation Junction Temperature
10.0
1.0
-55 to +125
-55 to +150
mA
°C
°C
Rev.A4
www.gulfsemi.com

W01M Related Products

W01M W005M W04M W02M W06M W08M W10M
Description 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE GENESIC SEMICONDUCTOR - W04M - BRIDGE RECTIFIER; 1PH; 1.5A; 400V; DOB GENESIC SEMICONDUCTOR - W02M - BRIDGE RECTIFIER; 1PH; 1.5A; 200V; DOB 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),BR-1W
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor
Reach Compliance Code unknow unknown unknow unknow unknow unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V
Humidity sensitivity level 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Maximum repetitive peak reverse voltage 100 V 50 V 400 V 200 V 600 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO
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