BUV20.MOD datasheet, PDF - EEWORLD Datasheet

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BUV20.MOD: DescriptionPower Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size18KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BUV20.MOD Overview

Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

BUV20.MOD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	TO-3, 2 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	125 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz

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BUV20

MECHANICAL DATA

Dimensions in mm(inches)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

1.52 (0.06)

3.43 (0.135)

6.35 (0.25)

9.15 (0.36)

NPN MULTI - EPITAXIAL

POWER TRANSISTOR

38.61 (1.52)

39.12 (1.54)

0.97 (0.060)

1.10 (0.043)

29.9 (1.177)

30.4 (1.197)

16.64 (0.655)

17.15 (0.675)

22.23

(0.875)

max.

FEATURES

• HIGH CURRENT

• FAST SWITCHING

• HIGH RELIABILITY

(case)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

APPLICATIONS

TO–3

PIN 1 — Base

PIN 2 — Emitter

Case is Collector.

• Industrial Equipment

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

CBO

CER

CEX

CEO

EBO

tot

stg,

Collector – Base Voltage (I

= 0)

Collector – Emitter Voltage (R

= 100

)

Collector – Emitter Voltage (V

= -1.5V)

Collector – Emitter Voltage (I

= 0)

Emitter – Base Voltage (I

= 0)

Collector Current

Peak Collector Current (t

= 10 ms)

Base Current

Total Power Dissipation at T

case

25°C

Storage Temperature

Junction Temperature

160V

150V

160V

125V

50A

60A

10A

250W

–65 to 200°C

200°C

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

prelim. 5/00

BUV20.MOD Related Products

	BUV20.MOD	BUV20	BUV20.MODR1	BUV20R1
Description	Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	npn multi - epitaxial power transistor	Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 50A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it Rohs certified?	incompatible	incompatible	conform to	conform to
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	TO-3, 2 PIN	FLANGE MOUNT, O-MBFM-P2	TO-3, 2 PIN	TO-3, 2 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	50 A	50 A	50 A	50 A
Collector-emitter maximum voltage	125 V	125 V	125 V	125 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10	10	10
JEDEC-95 code	TO-3	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8 MHz	8 MHz	8 MHz	8 MHz

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