BC447, BC449, BC449A
High Voltage Transistors
PNP Silicon
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC447
BC449, BC449A
Collector-Base Voltage
BC447
BC449, BC449A
Emitter-Base Voltage
Collector Current – Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
Symbol
V
CEO
80
100
V
CBO
80
100
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
–55 to
+150
MSL: 1
NA
Watts
mW/°C
°C
1
2
3
mW
mW/°C
5.0
300
Vdc
mAdc
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
COLLECTOR
1
CASE 29
TO–92
STYLE 17
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
θJA
R
θJC
Max
200
83.3
Unit
°C/W
°C/W
MARKING DIAGRAM
BC
44xx
YWW
BC44xx
xx
Y
WW
= Specific Device Code
= 7, 9 or 9A
= Year
= Work Week
ORDERING INFORMATION
Device
BC447
BC449
BC449A
Package
TO–92
TO–92
TO–92
Shipping
5000 Units/Box
5000 Units/Box
5000 Units/Box
©
Semiconductor Components Industries, LLC, 2001
213
May, 2001 – Rev. 0
Publication Order Number:
BC447/D
BC447, BC449, BC449A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
BC447
BC449, BC449A
V
(BR)CEO
BC447
BC449, BC449A
V
(BR)CBO
BC447
BC449, BC449A
V
(BR)EBO
5.0
I
CBO
–
–
–
–
100
100
–
–
nAdc
80
100
–
–
–
–
Vdc
80
100
–
–
–
–
Vdc
Vdc
ON CHARACTERISTICS
(Note 1.)
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Base–Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Base–Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc) (Note 1.)
h
FE
BC447, BC449
BC449A
BC447, BC449
BC449A
BC447, BC449
BC449A
V
CE(sat)
–
V
BE(sat)
–
V
BE(on)
0.55
–
–
0.76
0.7
1.2
0.85
–
Vdc
0.125
0.25
Vdc
50
120
50
100
50
60
–
–
–
–
–
–
460
220
–
–
–
–
Vdc
–
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle 2%
f
T
100
200
–
MHz
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214
BC447, BC449, BC449A
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
300
200
T
J
= 25°C
-5.0 V
V
CE
= -1.0 V
100
70
50
30
-1.0
C, CAPACITANCE (pF)
20
C
ibo
10
8.0
6.0
4.0
2.0
-0.1 -0.2
C
obo
40
25°C
TT
J
==25°C
J
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-0.5 -1.0
-2.0
-5.0
-10 -20
-50 -100
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Current–Gain — Bandwidth Product
Figure 2. Capacitance
300
t, TIME (ns)
200
100
70
50
30
20
10
t
s
t
f
t
r
I C , COLLECTOR CURRENT (mA)
1.0 k
700
500
V
CC
= -40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
-1.0 k
-700
-500
-300
-200
-100
-70
-50
-30
-20
-10
-1.0
t
d
@ V
BE(off)
= -0.5 V
-10
-20
-30
-50
-70
-100
-200
I
C
, COLLECTOR CURRENT (mA)
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8598
DUTY CYCLE
≤
10%
MPS8599
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Switching Times
Figure 4. Active–Region Safe Operating Area
300
T
J
= 125°C
200
h FE, DC CURRENT GAIN
V, VOLTAGE (VOLTS)
25°C
100
70
50
30
-0.2
-55°C
V
CE
= -5.0 V
1.0
0.8
0.6
0.4
0.2
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
V
CE(sat)
@ I
C
/I
B
= 10
-0.5
-1.0 -2.0
-5.0
-10
-20
-50 -100 -200
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain
Figure 6. “ON” Voltages
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215
BC447, BC449, BC449A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.6
1.2
0.8
0.4
0
0.02
T
J
= 25°C
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
I
C
=
10 mA
I
C
=
20 mA
I
C
=
50 mA
I
C
=
100 mA
I
C
=
200 mA
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
0.2
R
q
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
R
qVB
FOR V
BE
-55°C TO 125°C
0.5
1.0
2.0
5.0
10
20
50
100
200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base–Emitter Temperature
Coefficient
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
0.02
0.01
P
(pk)
t
1
SINGLE PULSE
t
2
DUTY CYCLE, D = t
1
/t
2
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
500
1.0 k
2.0 k
5.0 k
Z
θJC
(t) = r(t)
•
R
θJC
T
J(pk)
- T
C
= P
(pk)
Z
θJC
(t)
Z
θJA
(t) = r(t)
•
R
θJA
T
J(pk)
- T
A
= P
(pk)
Z
θJA
(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
(SEE AN469)
10 k
20 k
50 k 100 k
Figure 9. Thermal Response
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