D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
BC447, BC449, BC449A
High Voltage Transistors
NPN Silicon
Features
•
Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
BC447
BC449, BC449A
Collector-Base Voltage
BC447
BC449, BC449A
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
Symbol
V
CEO
80
100
V
CBO
80
100
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
MSL: 1
NA
W
mW/°C
°C
mW
mW/°C
5.0
300
Vdc
mAdc
1
2
3
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC
44x
AYWW
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC44x = Device Code
x = 7 or 9
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC447
BC447G
BC449
BC449G
BC449A
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
BC449AG
1
September, 2005 − Rev. 3
Publication Order Number:
BC447/D
BC447, BC449, BC449A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
BC447
BC449, BC449A
V
(BR)CEO
BC447
BC449, BC449A
V
(BR)CBO
BC447
BC449, BC449A
V
(BR)EBO
5.0
I
CBO
−
−
−
−
100
100
−
−
nAdc
80
100
−
−
−
−
Vdc
80
100
−
−
−
−
Vdc
Vdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Base −Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc) (Note 1)
h
FE
BC447, BC449
BC449A
BC447, BC449
BC449A
BC447, BC449
BC449A
V
CE(sat)
−
V
BE(sat)
−
V
BE(on)
0.55
−
−
0.76
0.7
1.2
0.85
−
Vdc
0.125
0.25
Vdc
50
120
50
100
50
60
−
−
−
−
−
−
460
220
−
−
−
−
Vdc
−
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle 2%
f
T
100
200
−
MHz
http://onsemi.com
2
BC447, BC449, BC449A
f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
300
T
J
= 25°C
200
V
CE
= −1.0 V
100
70
50
30
−1.0
−5.0 V
C, CAPACITANCE (pF)
20
C
ibo
10
8.0
6.0
C
obo
4.0
2.0
−0.1 −0.2
40
25°C
TT
J
==25°C
J
−2.0 −3.0
−5.0 −7.0 −10
−20 −30
−50 −70 −100
−0.5 −1.0 −2.0
−5.0
−10 −20
−50 −100
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Current−Gain — Bandwidth Product
Figure 2. Capacitance
300
t, TIME (ns)
200
100
70
50
30
20
10
t
s
t
f
I C , COLLECTOR CURRENT (mA)
1.0 k
700
500
V
CC
= −40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
−1.0 k
−700
−500
−300
−200
−100
−70
−50
−30
−20
−10
−1.0
t
r
t
d
@ V
BE(off)
= −0.5 V
−10
−20
−30
−50
−70
−100
−200
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8598
DUTY CYCLE
≤
10%
MPS8599
−2.0 −3.0
−5.0 −7.0 −10
−20 −30
−50 −70 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Switching Times
Figure 4. Active−Region Safe Operating Area
300
T
J
= 125°C
200
h FE , DC CURRENT GAIN
V, VOLTAGE (VOLTS)
25°C
100
70
50
−55°C
V
CE
= −5.0 V
1.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
0.8
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
30
−0.2
−0.5
−1.0 −2.0
−5.0
−10
−20
−50 −100 −200
0.5
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain
Figure 6. “ON” Voltages
http://onsemi.com
3
BC447, BC449, BC449A
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
I
C
=
10 mA
I
C
=
20 mA
I
C
=
50 mA
I
C
=
100 mA
I
C
=
200 mA
−1.0
R
q
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
1.6
−1.4
1.2
−1.8
−2.2
R
qVB
FOR V
BE
−55°C TO 125°C
0.8
0.4
T
J
= 25°C
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
−2.6
−3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base−Emitter Temperature
Coefficient
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
0.02
0.01
P
(pk)
t
1
SINGLE PULSE
t
2
DUTY CYCLE, D = t
1
/t
2
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
500
1.0 k
2.0 k
5.0 k
Z
qJC
(t) = r(t)
•
R
qJC
T
J(pk)
− T
C
= P
(pk)
Z
qJC
(t)
Z
qJA
(t) = r(t)
•
R
qJA
T
J(pk)
− T
A
= P
(pk)
Z
qJA
(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
(SEE AN469)
10 k
20 k
50 k 100 k
Figure 9. Thermal Response
http://onsemi.com
4
Renesas Electronics MCUs
京公网安备 11010802033920号
EEWORLD
