IRFJ240-JQR-BR1 datasheet, PDF

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IRFJ240-JQR-BR1: DescriptionPower Field-Effect Transistor, 13A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETIC SEALED, METAL, TO-213AA, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size23KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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IRFJ240-JQR-BR1 Overview

Power Field-Effect Transistor, 13A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETIC SEALED, METAL, TO-213AA, 2 PIN

IRFJ240-JQR-BR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	13 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
JESD-609 code	e1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	50 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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IRFJ240

MECHANICAL DATA

Dimensions in mm (inches)

3.68

(0.145) rad.

max.

6.35 (0.250)

8.64 (0.340)

3.61 (0.142)

4.08(0.161)

rad.

N–CHANNEL

POWER MOSFET

FOR HI–REL

APPLICATIONS

DSS

D(cont)

DS(on)

200V

13A

0.18Ω

14.48 (0.570)

14.99 (0.590)

4.83 (0.190)

5.33 (0.210)

9.14 (0.360)

min.

1.27 (0.050)

1.91 (0.750)

11.94 (0.470)

12.70 (0.500)

24.13 (0.95)

24.63 (0.97)

0.71 (0.028)

0.86 (0.034)

FEATURES

• HERMETICALLY SEALED TO-66 METAL

PACKAGE

• SIMPLE DRIVE REQUIREMENTS

TO-66 METAL PACKAGE (TO213AA)

Underside View

Pin 1 = Gate

Pin 2 = Source

Case = Drain

• SCREENING OPTIONS AVAILABLE

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

, T

stg

θJC

θJA

Gate – Source Voltage

Continuous Drain Current @ T

case

= 25°C

Continuous Drain Current @ T

case

= 100°C

Pulsed Drain Current

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

Operating and Storage Temperature Range

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

±20V

13A

50A

70W

0.56W/°C

–55 to 150°C

1.8°C/W max.

50°C/W max.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 5265

Issue 1

IRFJ240-JQR-BR1 Related Products

	IRFJ240-JQR-BR1	IRFJ240-QR-BR1	IRFJ240-QR-B	IRFJ240R1	IRFJ240-JQR-B	IRFJ240
Description	Power Field-Effect Transistor, 13A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETIC SEALED, METAL, TO-213AA, 2 PIN	Power Field-Effect Transistor, 13A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETIC SEALED, METAL, TO-213AA, 2 PIN	Power Field-Effect Transistor, 13A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETIC SEALED, METAL, TO-213AA, 2 PIN	Power Field-Effect Transistor, 13A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETIC SEALED, METAL, TO-213AA, 2 PIN	Power Field-Effect Transistor, 13A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETIC SEALED, METAL, TO-213AA, 2 PIN	Power Field-Effect Transistor, 13A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETIC SEALED, METAL, TO-213AA, 2 PIN
Is it Rohs certified?	conform to	conform to	incompatible	conform to	incompatible	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	200 V	200 V	200 V	200 V	200 V	200 V
Maximum drain current (ID)	13 A	13 A	13 A	13 A	13 A	13 A
Maximum drain-source on-resistance	0.18 Ω	0.18 Ω	0.18 Ω	0.18 Ω	0.18 Ω	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-66	TO-66	TO-66	TO-66	TO-66	TO-66
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	50 A	50 A	50 A	50 A	50 A	50 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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