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MTZJ10DR0G

Description
Zener Diode, 10.19V V(Z), 2.5%, 0.5W, Silicon, Unidirectional, DO-34, DO-204, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size566KB,8 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

MTZJ10DR0G Overview

Zener Diode, 10.19V V(Z), 2.5%, 0.5W, Silicon, Unidirectional, DO-34, DO-204, 2 PIN

MTZJ10DR0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionDO-204, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Nominal reference voltage10.19 V
surface mountNO
technologyZENER
Terminal surfaceTIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2.5%
Working test current5 mA
FEATURES
Power dissipation
- RoHS compliant
- Hermetically sealed glass
Storage temperature range
No
Small Signal Product
Operating junction temperature
and leads are readily solderable
M
M
M
TZ
M
TZ
TZ
J1
0A
J1
- Solder hot dip Tin (Sn) lead finish
J1 0B
0
M
TZ J10 C
M
M
TZ
TZ J11 D
M
M
TZ J24
TZ J11 A
M
M
TZ J24 A
TZ J12 C
M
M
TZ J24 B
TZ J12 A
M
M
TZ J24 C
M
TZ J12 B
M
TZ
D
J2
M
TZ
M
7A
TZ J13 C
M
TZ J39
M
A
TZ J27
J1
M
TZ
M
TZ J39 A
M
TZ J27 B
J1 3B
M
TZ
M
TZ J39 B
M
TZ J27 C
J1 3C
M
TZ
M
TZ J39 C
M
TZ J2V D
J1 5A
M
TZ
M
TZ J3V D
M
TZ J2V 0A
J1 5B
M
TZ
M
TZ J3V 0A
M
TZ J2V 0B
J1 5C
M
TZ
M
TZ J3V 0B
M
TZ J2V 2A
J1 6A
M
TZ
M
TZ J3V 3A
M
TZ J2V 2B
J1 6B
M
TZ
M
TZ J3V 3B
M
TZ J2V 4A
J1 6C
M
TZ
M
TZ J3V 6A
M
TZ J2V 4B
J1 8A
M
TZ
M
TZ J3V 6B
M
TZ J2V 7A
J2 8C
M
TZ
M
TZ J3V 9A
M
TZ J30 7B
J2 0A
M
TZ
M
TZ J4V 9B
M
TZ J30 A
J2 0B
M
TZ
M
TZ J4V 3A
M
TZ J30 B
J2 0C
M
TZ
M
TZ J4V 3B
M
TZ J30 C
J2 0D
M
TZ
M
TZ J4V 3C
M
TZ J33 D
J2 2A
M
TZ
M
TZ J4V 7A
M
TZ J33 A
J2 2B
M
TZ
M
TZ J4V 7B
M
TZ J33 B
J2 2C
M
TZ
M
TZ J5V 7C
M
TZ J33 C
J9 2D
M
TZ
M
TZ J5V 1A
M
TZ J36 D
J9 V1A
M
TZ
M
TZ J5V 1B
TZ J36 A
J9 V1B
M
M
TZ J5V 1C
V1
TZ J36 B
M
C
M
TZ J5V 6A
TZ J36 C
M
M
TZ J5V 6B
TZ J8V D
M
M
TZ J6V 6C
TZ J8V 2A
M
TZ J6V 2A
2B
J8
M
V2
TZ J6V 2B
C
M
TZ J6V 2C
M
TZ J6V 8A
M
TZ J6V 8B
M
TZ J7V 8C
5
J7
V5 B
C
Document Number: DS_S1311002
- Zener voltage range : 2.0V to 39V
- DO-34 package (JEDEC DO-204)
- Compression bonded construction
- Cathode indicated by polarity band
- Through-hole device type mounting
- All external surfaces are corrosion resistant
PARAMETER
mm
en
de
d
DO-34
L
t
P
D
T
J
SYMBOL
Lead temperature (1/16" from case for 10 seconds)
TZ
tR
eco
500mW, Hermetically Sealed Glass Zener Diodes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
T
STG
VALUE
175
230
o
500
MTZJ2V0A - MTZJ39D
-65 to +200
o
o
Taiwan Semiconductor
UNIT
mW
C
C
C
Version: C15

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