IRGCC40KE datasheet, PDF - EEWORLD Datasheet

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IRGCC40KE: DescriptionInsulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2; CategoryDiscrete semiconductor The transistor; File Size18KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRGCC40KE Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2

IRGCC40KE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	DIE-2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	ULTRA FAST SPEED
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	5.5 V
JESD-30 code	R-XUUC-N2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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PD-9.1427

TARGET

IRGCC40KE

IRGCC40KE IGBT Die in Wafer Form

C

G

E

600 V

Size 4

Ultra-Fast Speed

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V

CE (on)

V

(BR)CES

V

GE(th)

I

CES

I

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

Test Conditions

4.1V Max.

I

C

= 20A, T

J

= 25°C, V

GE

= 15V

600V Min.

T

J

= 25°C, I

CES

= 250µA, V

GE

= 0V

3.0V Min., 5.5V Max.

V

GE

= V

CE

, T

J

=25°C, I

C

=250µA

250 µA Max.

T

J

= 25°C, V

CE

= 600V

±

500 nA Max.

T

J

= 25°C, V

GE

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : IRGPC40K

Cr-Ni-Ag ( 1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.170" x 0.232"

125mm, with std. < 100 > flat

.015" + / -.003"

01-5101

100 Microns

0.25mm Diameter Minimum

See Die Outline drawing below

Store in original container, in dessicated

nitrogen, with no contamination

Die Outline

INK DOT

LOCATION

3.28

(.129 )

NOTES :

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. LETTER DESIGNATION :

S = SOURCE

G = GATE

4. DIMENSIONAL TOLERANCES

BONDING PADS : < 0.635 TOLERANCE = +/- 0.013

WIDTH

< (.0250 ) TOLERANCE =+/- (.0005 )

&

> 0.635 TOLERANCE = +/- 0.025

LENGTH

> (.0250 ) TOLERANCE = +/- (.0010 )

OVERALL DIE

< 1.270 TOLERANCE = +/- 0.102

WIDTH

< (.050 ) TOLERANCE = +/- (.004 )

&

> 0.635 TOLERANCE = +/- 0.203

LENGTH

> (.050 ) TOLERANCE = +/- (.008 )

5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III

1.45

(.057 )

EMITTER

5.89

(.232 )

G

0.73

(.029 )

0.72

(.028 )

4.31

(.170 )

IRGCC40KE Related Products

	IRGCC40KE	IRGCC40KEPBF
Description	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2
Is it Rohs certified?	incompatible	conform to
Maker	Infineon	Infineon
package instruction	DIE-2	UNCASED CHIP, R-XUUC-N2
Reach Compliance Code	unknown	compliant
Other features	ULTRA FAST SPEED	ULTRA FAST SPEED
Collector-emitter maximum voltage	600 V	600 V
Configuration	SINGLE	SINGLE
JESD-30 code	R-XUUC-N2	R-XUUC-N2
Number of components	1	1
Number of terminals	2	2
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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