IRGCC40KEPBF datasheet, PDF - EEWORLD Datasheet

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IRGCC40KEPBF: DescriptionInsulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2; CategoryDiscrete semiconductor The transistor; File Size18KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRGCC40KEPBF Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2

IRGCC40KEPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	UNCASED CHIP, R-XUUC-N2
Reach Compliance Code	compliant
Other features	ULTRA FAST SPEED
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JESD-30 code	R-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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PD-9.1427

TARGET

IRGCC40KE

IRGCC40KE IGBT Die in Wafer Form

600 V

Size 4

Ultra-Fast Speed

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

CE (on)

(BR)CES

GE(th)

CES

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

Test Conditions

4.1V Max.

= 20A, T

= 25°C, V

= 15V

600V Min.

= 25°C, I

CES

= 250µA, V

= 0V

3.0V Min., 5.5V Max.

= V

, T

=25°C, I

=250µA

250 µA Max.

= 25°C, V

= 600V

500 nA Max.

= 25°C, V

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : IRGPC40K

Cr-Ni-Ag ( 1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.170" x 0.232"

125mm, with std. < 100 > flat

.015" + / -.003"

01-5101

100 Microns

0.25mm Diameter Minimum

See Die Outline drawing below

Store in original container, in dessicated

nitrogen, with no contamination

Die Outline

INK DOT

LOCATION

3.28

(.129 )

NOTES :

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. LETTER DESIGNATION :

S = SOURCE

G = GATE

4. DIMENSIONAL TOLERANCES

BONDING PADS : < 0.635 TOLERANCE = +/- 0.013

WIDTH

< (.0250 ) TOLERANCE =+/- (.0005 )

> 0.635 TOLERANCE = +/- 0.025

LENGTH

> (.0250 ) TOLERANCE = +/- (.0010 )

OVERALL DIE

< 1.270 TOLERANCE = +/- 0.102

WIDTH

< (.050 ) TOLERANCE = +/- (.004 )

> 0.635 TOLERANCE = +/- 0.203

LENGTH

> (.050 ) TOLERANCE = +/- (.008 )

5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III

1.45

(.057 )

EMITTER

5.89

(.232 )

0.73

(.029 )

0.72

(.028 )

4.31

(.170 )

IRGCC40KEPBF Related Products

	IRGCC40KEPBF	IRGCC40KE
Description	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2
Is it Rohs certified?	conform to	incompatible
Maker	Infineon	Infineon
package instruction	UNCASED CHIP, R-XUUC-N2	DIE-2
Reach Compliance Code	compliant	unknown
Other features	ULTRA FAST SPEED	ULTRA FAST SPEED
Collector-emitter maximum voltage	600 V	600 V
Configuration	SINGLE	SINGLE
JESD-30 code	R-XUUC-N2	R-XUUC-N2
Number of components	1	1
Number of terminals	2	2
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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