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PA28F016S3-120

Description
Flash, 2MX8, 120ns, PDSO44, 13.30 X 28.20 MM, PLASTIC, SOP-44
Categorystorage    storage   
File Size462KB,41 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
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PA28F016S3-120 Overview

Flash, 2MX8, 120ns, PDSO44, 13.30 X 28.20 MM, PLASTIC, SOP-44

PA28F016S3-120 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOIC
package instructionSOP, SOP44,.63
Contacts44
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time120 ns
Other featuresUSER-SELECTABLE 3.3V OR 12V VPP
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length28.2 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size32
Number of terminals44
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height2.95 mm
Department size64K
Maximum standby current0.00001 A
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width13.3 mm
Base Number Matches1
E
n
n
n
n
n
PRELIMINARY
3 VOLT FlashFile™ MEMORY
28F004S3, 28F008S3, 28F016S3 (x8)
SmartVoltage Technology
2.7 V (Read-Only) or 3.3 V V
CC
and
3.3 V or 12 V V
PP
High-Performance
120 ns Read Access Time
Enhanced Data Protection Features
Absolute Protection with V
PP
= GND
Flexible Block Locking
Block Write Lockout during Power
Transitions
Enhanced Automated Suspend Options
Program Suspend to Read
Block Erase Suspend to Program
Block Erase Suspend to Read
Industry-Standard Packaging
40-Lead TSOP, 44-Lead PSOP
n
n
n
n
n
n
High-Density 64-Kbyte Symmetrical
Erase Block Architecture
4 Mbit: Eight Blocks
8 Mbit: Sixteen Blocks
16 Mbit: Thirty-Two Blocks
Extended Cycling Capability
100,000 Block Erase Cycles
Low Power Management
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
CC
in Static Mode
Automated Program and Block Erase
Command User Interface
Status Register
SRAM-Compatible Write Interface
ETOX™ V Nonvolatile Flash
Technology
The Intel
®
3 Volt FlashFile™ memory family renders a variety of density offerings in the same package. The
4-, 8-, and 16-Mbit 3 Volt FlashFile memories provide high-density, low-cost, nonvolatile, read/write storage
solutions for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage, and
extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory
cards. Enhanced suspend capabilities provide an ideal solution for code or data storage applications. For
secure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the 4-, 8-, and 16-Mbit FlashFile memories offer three levels of protection: absolute
protection with V
PP
at GND, selective hardware block locking, or flexible software block locking. These
alternatives give designers ultimate control of their code security needs.
This family of products is manufactured on Intel
®
0.4
µm
ETOX™ V process technology. They come in
industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged
44-lead PSOP. Based on the 28F008SA architecture, the 3 Volt FlashFile memory family enables quick and
easy upgrades for designs that demand state-of-the-art technology.
NOTE:
This document formerly known as
Byte-Wide Smart 3 FlashFile™ Memory Family 4, 8, and 16 Mbit
.
December 1998
Order Number: 290598-005

PA28F016S3-120 Related Products

PA28F016S3-120 E28F016S3-150 TB28F016S3-150 G28F016S3-120 G28F016S3-150
Description Flash, 2MX8, 120ns, PDSO44, 13.30 X 28.20 MM, PLASTIC, SOP-44 Flash, 2MX8, 150ns, PDSO40, 10 X 20 MM, TSOP-40 Flash, 2MX8, 150ns, PDSO44, 13.30 X 28.20 MM, PLASTIC, SOP-44 Flash, 2MX8, 120ns, PBGA40, CSP, MICRO, BGA-40 Flash, 2MX8, 150ns, PBGA40, CSP, MICRO, BGA-40
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Parts packaging code SOIC TSOP SOIC BGA BGA
package instruction SOP, SOP44,.63 10 X 20 MM, TSOP-40 SOP, SOP44,.63 VFBGA, BGA40,5X8,30 VFBGA, BGA40,5X8,30
Contacts 44 40 44 40 40
Reach Compliance Code unknow unknow unknow unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 120 ns 150 ns 150 ns 120 ns 150 ns
Other features USER-SELECTABLE 3.3V OR 12V VPP USER-SELECTABLE 3.3V OR 12V VPP USER-SELECTABLE 3.3V OR 12V VPP MINIMUM 100K BLOCK ERASE CYCLES; AUTOMATED PROGRAM AND BLOCK ERASE MINIMUM 100K BLOCK ERASE CYCLES; AUTOMATED PROGRAM AND BLOCK ERASE
command user interface YES YES YES YES YES
Data polling NO NO NO NO NO
JESD-30 code R-PDSO-G44 R-PDSO-G40 R-PDSO-G44 R-PBGA-B40 R-PBGA-B40
JESD-609 code e0 e0 e0 e0 e0
length 28.2 mm 18.4 mm 28.2 mm 9.228 mm 9.228 mm
memory density 16777216 bi 16777216 bi 16777216 bi 16777216 bi 16777216 bit
Memory IC Type FLASH FLASH FLASH FLASH FLASH
memory width 8 8 8 8 8
Number of functions 1 1 1 1 1
Number of departments/size 32 32 32 32 32
Number of terminals 44 40 44 40 40
word count 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000 2000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 85 °C 70 °C 70 °C
organize 2MX8 2MX8 2MX8 2MX8 2MX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP TSOP1 SOP VFBGA VFBGA
Encapsulate equivalent code SOP44,.63 TSSOP40,.8,20 SOP44,.63 BGA40,5X8,30 BGA40,5X8,30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V
Programming voltage 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
ready/busy YES YES YES YES YES
Maximum seat height 2.95 mm 1.2 mm 2.95 mm 1 mm 1 mm
Department size 64K 64K 64K 64K 64K
Maximum standby current 0.00001 A 0.00001 A 0.00002 A 0.00001 A 0.00001 A
Maximum slew rate 0.04 mA 0.04 mA 0.04 mA 0.04 mA 0.04 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES
technology MOS MOS MOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING BALL BALL
Terminal pitch 1.27 mm 0.5 mm 1.27 mm 0.75 mm 0.75 mm
Terminal location DUAL DUAL DUAL BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
switch bit NO NO NO NO NO
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width 13.3 mm 10 mm 13.3 mm 7.628 mm 7.628 mm
Base Number Matches 1 1 1 1 -
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