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2SB1499Q

Description
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size165KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SB1499Q Overview

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN

2SB1499Q Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1
Power Transistors
2SB1499, 2SB1499A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s
Features
q
q
q
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
10.0±0.2
1.0
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Allowing automatic insertion with radial taping
(T
C
=25˚C)
–60
–80
–60
–80
–5
–8
–4
15
2
5.0±0.1
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to
2SB1499
13.0±0.2
4.2±0.2
90°
Ratings
Unit
V
2.5±0.2
1.2±0.1
C1.0
2.25±0.2
18.0±0.5
Solder Dip
base voltage
Collector to
2SB1499A
2SB1499
0.35±0.1
0.65±0.1
1.05±0.1
emitter voltage 2SB1499A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
T
stg
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SB1499
2SB1499A
2SB1499
Collector cutoff
current
2SB1499A
Emitter cutoff current
Collector to emitter
voltage
2SB1499
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
0.55±0.1
V
V
A
A
0.55±0.1
C1.0
1 2 3
2.5±0.2
2.5±0.2
W
150
˚C
˚C
1:Base
2:Collector
3:Emitter
MT4 Type Package
–55 to +150
(T
C
=25˚C)
Symbol
Conditions
min
typ
max
Unit
µA
µA
I
CES
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
–400
–400
–700
–700
–1
I
CEO
I
EBO
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
mA
V
2SB1499A
V
CEO
h
FE1*
h
FE2
V
BE
I
C
= –30mA, I
B
= 0
–60
–80
70
15
Forward current transfer ratio
Base to emitter voltage
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
250
Pl
–2
–1.5
30
0.2
V
V
MHz
µs
µs
µs
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
V
CE(sat)
f
T
t
on
t
stg
t
f
I
C
= –4A, I
B
= – 0.4A
V
CE
= –10V, I
C
= – 0.1A, f = 10MHz
I
C
= –4A, I
B1
= – 0.4A, I
B2
= 0.4A
0.5
0.2
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
1

2SB1499Q Related Products

2SB1499Q 2SB1499AP 2SB1499AQ 2SB1499P
Description Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage 60 V 80 V 80 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 70 120 70 120
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz 30 MHz
Base Number Matches 1 1 1 1
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