Power Transistors
P
C
— Ta
20
–6
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
I
B
=–120mA
–5
T
C
=25˚C
2SB1499, 2SB1499A
I
C
— V
CE
–10
V
CE
=–4V
I
C
— V
BE
Collector power dissipation P
C
(W)
–100mA
–80mA
Collector current I
C
(A)
15
–4
Collector current I
C
(A)
–8
–60mA
–6
25˚C
T
C
=100˚C
–25˚C
(1)
10
–3
–40mA
–20mA
–4
M
Di ain
sc te
on na
tin nc
ue e/
d
–2
5
–10mA
–1
–8mA
–5mA
–2
(2)
0
0
0
0
20
40
60
80 100 120 140 160
0
–2
–4
–6
–8
–10
–12
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
I
C
/I
B
=10
– 0.3
– 0.1
– 0.03
25˚C
T
C
=100˚C
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
h
FE
— I
C
f
T
— I
C
10000
3000
10000
V
CE
=–4V
Forward current transfer ratio h
FE
1000
300
100
25˚C
Transition frequency f
T
(MHz)
3000
1000
300
100
30
10
3
V
CE
=–5V
f=10MHz
T
C
=25˚C
T
C
=100˚C
–25˚C
30
10
3
–10
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
–100
–30
–10
–3
–1
10000
I
CP
t=1ms
I
C
Thermal resistance R
th
(t) (˚C/W)
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
Collector current I
C
(A)
1000
10ms
DC
Pl
100
(1)
(2)
– 0.3
– 0.1
– 0.03
– 0.01
–1
10
2SB1499A
2SB1499
1
–3
–10
–30
–100 –300 –1000
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
–
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–
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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