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IRKC81-18

Description
DIODE 80 A, 1800 V, SILICON, RECTIFIER DIODE, POWER, ADD-A-PAK-3, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size103KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

IRKC81-18 Overview

DIODE 80 A, 1800 V, SILICON, RECTIFIER DIODE, POWER, ADD-A-PAK-3, Rectifier Diode

IRKC81-18 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerVishay
package instructionR-PUFM-X3
Contacts3
Reach Compliance Codeunknown
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationHIGH VOLTAGE POWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PUFM-X3
Maximum non-repetitive peak forward current1680 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current80 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1800 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
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