Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-63 |
| package instruction | POST/STUD MOUNT, O-MUPM-D3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 20 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 7 |
| JEDEC-95 code | TO-63 |
| JESD-30 code | O-MUPM-D3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 150 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 4 MHz |
| Base Number Matches | 1 |
| 2N1937 | 2N2020 | 2N2185 | 2N2186 | 2N2187 | 2N298A | 1N1080 | |
|---|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN | Power Bipolar Transistor, 2A I(C), 125V V(BR)CEO, NPN, Silicon, MT-11 | Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN | Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN | Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN | Power Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN | Power Bipolar Transistor, 1-Element, NPN, Silicon, |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknown |
| Configuration | SINGLE | Single | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Polarity/channel type | NPN | NPN | PNP | PNP | PNP | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Parts packaging code | TO-63 | - | BCY | BCY | BCY | TO-5 | - |
| package instruction | POST/STUD MOUNT, O-MUPM-D3 | MT-11 | CYLINDRICAL, O-MBCY-W3 | TO-18, 3 PIN | TO-18, 3 PIN | TO-5, 3 PIN | - |
| Contacts | 3 | 11 | 3 | 3 | 3 | 3 | - |
| Maximum collector current (IC) | 20 A | 2 A | 0.05 A | 0.05 A | 0.05 A | - | - |
| Collector-emitter maximum voltage | 80 V | 125 V | 30 V | 30 V | 30 V | 100 V | - |
| Minimum DC current gain (hFE) | 7 | 40 | - | - | - | 12 | 20 |
| JEDEC-95 code | TO-63 | - | TO-18 | TO-18 | TO-18 | TO-5 | - |
| JESD-30 code | O-MUPM-D3 | - | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | - |
| Number of components | 1 | - | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | - | 3 | 3 | 3 | 3 | - |
| Maximum operating temperature | 175 °C | 175 °C | 140 °C | 140 °C | 150 °C | - | - |
| Package body material | METAL | - | METAL | METAL | METAL | METAL | - |
| Package shape | ROUND | - | ROUND | ROUND | ROUND | ROUND | - |
| Package form | POST/STUD MOUNT | - | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | - |
| Maximum power dissipation(Abs) | 150 W | 40 W | 0.15 W | 0.15 W | 0.15 W | - | - |
| surface mount | NO | NO | NO | NO | NO | NO | - |
| Terminal form | SOLDER LUG | - | WIRE | WIRE | WIRE | WIRE | - |
| Terminal location | UPPER | - | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - |
| Nominal transition frequency (fT) | 4 MHz | 3 MHz | 6.5 MHz | 6.5 MHz | 6.5 MHz | - | 10 MHz |
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