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2N2020

Description
Power Bipolar Transistor, 2A I(C), 125V V(BR)CEO, NPN, Silicon, MT-11
CategoryDiscrete semiconductor    The transistor   
File Size474KB,5 Pages
ManufacturerSemitronics Corp.
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2N2020 Overview

Power Bipolar Transistor, 2A I(C), 125V V(BR)CEO, NPN, Silicon, MT-11

2N2020 Parametric

Parameter NameAttribute value
package instructionMT-11
Contacts11
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage125 V
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1

2N2020 Related Products

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Description Power Bipolar Transistor, 2A I(C), 125V V(BR)CEO, NPN, Silicon, MT-11 Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN Power Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN Power Bipolar Transistor, 1-Element, NPN, Silicon,
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknown
Configuration Single SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Polarity/channel type NPN NPN PNP PNP PNP NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1
package instruction MT-11 POST/STUD MOUNT, O-MUPM-D3 CYLINDRICAL, O-MBCY-W3 TO-18, 3 PIN TO-18, 3 PIN TO-5, 3 PIN -
Contacts 11 3 3 3 3 3 -
Maximum collector current (IC) 2 A 20 A 0.05 A 0.05 A 0.05 A - -
Collector-emitter maximum voltage 125 V 80 V 30 V 30 V 30 V 100 V -
Minimum DC current gain (hFE) 40 7 - - - 12 20
Maximum operating temperature 175 °C 175 °C 140 °C 140 °C 150 °C - -
Maximum power dissipation(Abs) 40 W 150 W 0.15 W 0.15 W 0.15 W - -
surface mount NO NO NO NO NO NO -
Nominal transition frequency (fT) 3 MHz 4 MHz 6.5 MHz 6.5 MHz 6.5 MHz - 10 MHz
Parts packaging code - TO-63 BCY BCY BCY TO-5 -
JEDEC-95 code - TO-63 TO-18 TO-18 TO-18 TO-5 -
JESD-30 code - O-MUPM-D3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 -
Number of components - 1 1 1 1 1 1
Number of terminals - 3 3 3 3 3 -
Package body material - METAL METAL METAL METAL METAL -
Package shape - ROUND ROUND ROUND ROUND ROUND -
Package form - POST/STUD MOUNT CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Terminal form - SOLDER LUG WIRE WIRE WIRE WIRE -
Terminal location - UPPER BOTTOM BOTTOM BOTTOM BOTTOM -
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