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BU406H

Description
Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size39KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

BU406H Overview

Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BU406H Parametric

Parameter NameAttribute value
MakerCrimson Semiconductor Inc.
package instructionTO-220, 3 PIN
Reach Compliance Codeunknown
Other featuresLOW LEAKAGE
Maximum collector current (IC)7 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)6.25
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment60 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
VCEsat-Max1 V
This Material Copyrighted By Its Respective Manufacturer
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