2N3766
2N3767
NPN SILICON
POWER TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types
are silicon NPN power transistors manufactured by the
epitaxial base process designed for power amplifier and
medium speed switching applications.
MARKING CODE: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ
JC
2N3766
80
60
6.0
4.0
2.0
25
-65 to +200
7.0
2N3767
100
80
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
ICBO
ICEO
IEBO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
Cob
VCE=Rated VCBO, VBE=1.5V
VCB=Rated VCBO
VCE=Rated VCEO
VEB=6.0V
IC=100mA (2N3766)
IC=100mA (2N3767)
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
VCE=10V, IC=1.0A
VCE=5.0V, IC=50mA
VCE=5.0V, IC=500mA
VCE=10V, IC=1.0A
VCE=10V, IC=500mA, f=10MHz
VCB=10V, IC=0, f=100KHz
30
40
20
10
60
80
MAX
10
10
500
500
UNITS
μA
μA
μA
μA
V
V
1.0
2.5
1.5
160
V
V
V
MHz
50
pF
R1 (25-October 2007))