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2N3766LEADFREE

Description
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size171KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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2N3766LEADFREE Overview

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

2N3766LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-66
package instructionTO-66, 2 PIN
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
JESD-609 codee3
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
2N3766
2N3767
NPN SILICON
POWER TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types
are silicon NPN power transistors manufactured by the
epitaxial base process designed for power amplifier and
medium speed switching applications.
MARKING CODE: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ
JC
2N3766
80
60
6.0
4.0
2.0
25
-65 to +200
7.0
2N3767
100
80
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
ICBO
ICEO
IEBO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
Cob
VCE=Rated VCBO, VBE=1.5V
VCB=Rated VCBO
VCE=Rated VCEO
VEB=6.0V
IC=100mA (2N3766)
IC=100mA (2N3767)
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
VCE=10V, IC=1.0A
VCE=5.0V, IC=50mA
VCE=5.0V, IC=500mA
VCE=10V, IC=1.0A
VCE=10V, IC=500mA, f=10MHz
VCB=10V, IC=0, f=100KHz
30
40
20
10
60
80
MAX
10
10
500
500
UNITS
μA
μA
μA
μA
V
V
1.0
2.5
1.5
160
V
V
V
MHz
50
pF
R1 (25-October 2007))

2N3766LEADFREE Related Products

2N3766LEADFREE 2N3767LEADFREE
Description Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code TO-66 TO-66
package instruction TO-66, 2 PIN TO-66, 2 PIN
Contacts 2 2
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 60 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
JEDEC-95 code TO-66 TO-66
JESD-30 code O-MBFM-P2 O-MBFM-P2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 2
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface MATTE TIN (315) MATTE TIN (315)
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 10 10
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 10 MHz 10 MHz
Base Number Matches 1 1

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